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Update on PID studies for ITS upgrade

This document outlines the latest updates on Particle Identification (PID) studies related to the ITS upgrade by authors S. Bufalino, F. Prino, and S. Piano. It focuses on various configurations involving seven silicon layers with different thicknesses (10 μm, 15 μm, and 18 μm) and analyzes the particle separation and ITS resolution. Efficiency, contamination, and the effects of ADC bit depth on performance are thoroughly studied using generated events with a particle mix of π+, K+, and p at defined momentum ranges. The report highlights results from models, parameterizations, and statistical analyses crucial for future upgrades.

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Update on PID studies for ITS upgrade

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  1. Update on PID studiesfor ITS upgrade S.Bufalino, F.Prino INFN-Torino and S.Piano INFN-Trieste

  2. ITS CONFIGURATIONS • “Fast” tool: • ITS with 7 layers: Generated 100K events: π+, K+, p (0.040 GeV/c < mom < 2 GeV/c) with relative abundances equal 1/3 for π+, K+, p • 7 SPD with different thickness: 10 μm, 15 μm and 18 μm • Study of the particle separation and ITS resolution for each configuration with different number of ADC bit • Study of efficiency and contamination for 7 silicon layers of 15 μm usingan ADC with 10 bit and three value of noise : 10 e-, 20 e- and 40 e-

  3. Reminder on some definitions • Parametrization for 7 layers • Fit with a Gaussian function in a momentum bin for each particle type • 2 x 3 Parameters extracted: • Mean value (mv) x π,K,p • Gaussian Width (σ) x π,K,p • Calculation of BetheBloch(βγ) parameters by fit of mvvalues • Parameterization of σpart(βγ) • Identity: the lowest • |DE/DX - BetheBloch(βγ, Mpart)|/σpart(βγ) • Efficiency = Right MCID/Identity • Contamination = • Wrong MCID/(Right MCID+WrongMCID) pion Kaon proton

  4. 7 layer 20 mm for comparison p – K separation = (mvp– mvK)/ σK Protons 3σK -3σK π – K separation = (mvπ– mvK)/ σK Resolution=σp/mvp Particle mix: abundances equal to 1/3 for π+, K+, p Blu 8 bit ADC Red 6 bit ADC Black 4 bit ADC

  5. nSigma separation and resolution for 7 layers of 10 mm p – K separation = (mvp– mvK)/ σK PROTONS 3σK -3σK Resolution=σp/mvp PROTONS π – K separation = (mvπ– mvK)/ σK Particle mix: Abundances equal to 1/3 for π+, K+, p Noise gaussian distributed of 20 e-

  6. nSigma separation and resolution for 7 layers of 15 mm p – K separation = (mvp– mvK)/ σK PROTONS 3σK Resolution=σp/mvp -3σK PROTONS π – K separation = (mvπ– mvK)/ σK Particle mix: Abundances equal to 1/3 for π+, K+, p Noise gaussian distributed of 20 e-

  7. nSigma separation and resolution for 7 layers of 18 mm p – K separation = (mvp– mvK)/ σK PROTONS 3σK -3σK Resolution=σp/mvp PROTONS π – K separation = (mvπ– mvK)/ σK Particle mix: Abundances equal to 1/3 for π+, K+, p Noise gaussian distributed of 20 e-

  8. Efficiency and Contamination [15 mm, 10 bit ADC] PROTON From chap. 3 of CDR Efficiency 95% 95% Contamination Blue symbols: 7 x 20 mm thick layers with 8 bit ADC 15 mm, 10 bit ADC Relative abundances=1/3 for π+, K+, p

  9. Efficiency and Contamination • [15 mm, 10 bit ADC] KAON From chap. 3 of CDR Efficiency 95% 95% Contamination 15 mm, 10 bit ADC Relative abundances=1/3 for π+, K+, p Blue symbols: 7 x 20 mm thick layers with 8 bit ADC

  10. Efficiency and Contamination • [15 mm, 10 bit ADC] PION From chap. 3 of CDR Efficiency 95% 95% Contamination 15 mm, 10 bit ADC Relative abundances=1/3 for π+, K+, p Blue symbols: 7 x 20 mm thick layers with 8 bit ADC

  11. …to do • Study of contamination and efficiency for the ITS configurations with 7 layers of 10 μm and 18 μm • Generetion with particle mixes taken from pp data @ 900 GeV and PbPb data @ 2.76 TeV

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