1 / 1

MgO-based MTJs exhibit magnetoresistance exceeding 200% at room

A New Generation of Spintronic Devices: MgO Magnetic Tunneling Junctions MRSEC (Johns Hopkins University) DMR 0520491.

matt
Download Presentation

MgO-based MTJs exhibit magnetoresistance exceeding 200% at room

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. A New Generation of Spintronic Devices: MgO Magnetic Tunneling Junctions MRSEC (Johns Hopkins University) DMR 0520491 We developed a low-pressure magnetron sputtering technique together with the linear dynamic deposition method and successfully fabricated a new type of magnetic tunneling junctions (MTJs) with (001) textured MgO barrier. We are the only US university to have achieved this success as of April 2007. MgO-based MTJs exhibit magnetoresistance exceeding 200% at room temperature and low field, a major breakthrough in spintronics. The physics is coherent spin dependent tunneling, where only electron wavefuctions with certain symmetry can tunnel through. Schematics of a MgO-based MTJ that requires modern thin film deposition and lithography. The key to our success is to minimize the interfacial roughness using low pressure sputtering. We have achieved the best performance in MgO-based MTJs worldwide. Our mass production of these MTJs is used for industrial applications of metrology, magnetic sensing,and spintronic immunoassay. Weifeng Shen, Dipanjan Mazumdar, Xiaojing Zou, Xiaoyong Liu, B. D. Schrag, and Gang Xiao“Effect of film roughness in MgO-based magnetic tunnel junctions”, Applied Physics Letter 88, 182508 (2006). May 2007

More Related