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Company Introduction. Korea Instrument 2012. Agenda. Company Introduction Company Overview and Organization Business History. Product and Technology Memory MEMS products LSI products. Company Competitive Edge Probe manufacturing using MEMS Fab Bonding Automation SI/PI simulation.

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Company Introduction


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  1. Company Introduction Korea Instrument 2012

  2. Agenda • Company Introduction • Company Overview and Organization • Business History • Product and Technology • Memory MEMS products • LSI products • Company Competitive Edge • Probe manufacturing using MEMS Fab • Bonding Automation • SI/PI simulation

  3. Corporate Overview • Korea Instrument Co., Ltd. • Founded in 1996 • Located in Hwaseong City (30km from Seoul) • CEO Choi Jun Young • World Top class supplier of high-growth NAND Flash Probe • card solution with MEMS technology • Supports both Memory and LSI product with leading edge • technology

  4. Employee Status • Total 215 • R&D45 • Manufacturing 100 • QA & CS 32 • Sales & MKT 12 • Admin26 • - R&D Engineers portion : 21%

  5. Organization Chart CEO Sales & R&D Development Div. Manufacturing Div. Sales R&D Manufacturing Legal & Patent Admin Mechanical Marketing QA & CS Electronics LSI & MP dev.

  6. Business History • 2001~2008 • Started Manufacturing of 12” Probe card for • Flash memory (Korea 1st ) 2004 • Launch One touch down Probe card (World • 2nd) 2005 • Setup San Jose office 2007 • Started Manufacturing of MEMS card for • NAND Flash 2008 • 1995~2000 • Established KI (1996) • Set up SYSTEM LSI Division • (1999) • Setup R&D center (2000)

  7. Business History • 2009 • Started Mass production of Full MEMS Card for NAND • Flash • 2010 • Extended MEMS Capacity up to 400K pins/m • Achieved #1 Supplier of MEMS probe card in World Top • NAND Flash maker • Setup MEMS Fab for MEMS Probe manufacturing • Enhanced LSI card business and LSI Card product line-up • (DDI, DC MEMS, Vertical) • 2011 • Extended MEMS Capacity up to 700K pins/m • Launched Vertical Type card using MLC for Flipchip test • Started developing of MEMS Card for Flipchip test

  8. KI Probe Card by Application Source: Silicon Valley Test Conference 2010/ KI Marketing ● KI Card covers most of the application ☞Plan to Launch DRAM burn-in card in 2011 1Q

  9. KI Probe Card by Technology KI Coverage * Under development

  10. KI Probe Card Capability Design - PCB/MLC/Probe Repair Service Probe card simulation (Power/Signal/3D) MEMS Probe Fablite manufacturing Probe card Manufacturing & Integration (Memory, LSI) Quality Assurance PCB,MLC Probe card Assembly INDEX MEMS Probe KI in House or Fablite Needle OUTSOURCE manufacturing

  11. Company Introduction • Company Overview and History • Revenue Trend • Product and Technology • Memory MEMS products • LSI products • Company competitive edge • Probe manufacturing using MEMS Fab • Bonding Automation • SI/PI simulation

  12. PSJS S-MEMS H-MEMS Memory Product • Cantilever Type • Block type Pin • assembly • W/Re-W needle • One Touch Down • Quick Delivery time • Low cost • 2D MEMS Probe • Manual Bonding • One Touch Down • Longer life time • Higher MWBF* • 2D MEMS Probe • Auto Laser Bonding • One Touch Down • Longer life time • Higher MWBF • Fine pitch *MWBF: Mean Wafers between Failure

  13. ▷PSJS(New Cantilever) Cantilever Blocks • Perform Pre-insert the needles in the unique blocks • Assembles the Blocks • Enable Fast Delivery • Support One Touch Down • Low cost by using W-needle

  14. ▷S-MEMS • 2D MEMS Probe with Rh Probe end and Ni-Co body • Manual Bonding • One Touch Down • Longer life time ~ 300K touch down • Application : NAND FLASH, ONENAND

  15. ▷H-MEMS • 2D MEMS Probe with Rh Probe end and Ni-Co body • Auto Laser Bonding • One Touch Down • Longer life time ~ 300K touch down • Application: NAND FLASH, NOR FLASH, ONENAND, • DRAM(WBI)

  16. ▷Memory Probe Card Specification

  17. ▷ S-MEMS/H-MEMS Differences

  18. ▷ Delivery Lead Time *All lead time calculated based on 12,000 pins product.

  19. FLASH ▷H-MEMS Roadmap Target Pitch vs. Size DRAM 60um 12” Wafer Full Contact FLASH 90um 12” Wafer Full Contact 120 12” Size - IPCC 110um 110 100 90um Min. Pad Pitch(um) 90 8” Size - MLC 80 85um DRAM 70 12” Size - MLC 60um 60 Current 2011. 1Q 2011. 4Q

  20. LSI Product ▷ LSI Cantilever Probe card • General Purpose • Support multi pin and multi parallel • Easy repair and Fast delivery • Apply to all major LSI application such as CIS, MCU, Logic and DC • parametric ■Key Specifications

  21. ▷Fine pitch Probe Card for DDI • Ultra fine pitch, Staggered 14/28um • Contact Gold bumped area (min. 13x55um) • Apply to Display Driver IC wafer test ■Key Specifications

  22. ▷Vertical Card for Flipchip • Support Solder bumped or Cu-pillar Flipchip wafer test • Fast delivery • Low cost • Recommend to Development or Mass production of Small pins product • Started MP in 2010 3Q • High Speed • Maximized # of pins • Recommend to Mass produciton of high pins product • Started MP in 2011 1Q *KVW: KI Vertical card with Wiring ** KVM KI Vertical Card with MLC MEMS Probe with MLC (VM2) is under development

  23. ▷Vertical Card Key Specifications Wafer Side View Cross-section View PCB Interposer MLC Pogo PIN

  24. ▷LSI MEMS card : DC • For Low leakage DC test (Leakage level <500fA) • Using MEMS Probe with Rd Probe end. • Maximized Probe lifetime to ~1M touch down • Customer specified Contact force • Easy Repair by changing pin block Probe Tip Array Tester Side View Wafer Side View

  25. ▷LSI MEMS card : CIS • Support both Image & logic test • Using MEMS Probe with Rd Probe end. • Maximized Probe lifetime to ~1M touch down • Customer specified Contact force • Easy Pin block Repair • Qualification in 2011 1Q Bottom View Top View Probe Tip Array Tester Side View Wafer Side View

  26. ▷LSI MEMS card Specification Bottom View Top View

  27. Company Introduction • Company Overview and History • Revenue Trend • Product and Technology • Memory MEMS products • LSI products • Company competitive edge • Probe manufacturing using MEMS Fab • Auto Bonding System • Simulation

  28. Probe Manufacturing ■ Overview

  29. ■ 2011 Key Milestone 1Q 2Q 3Q 4Q • Qualified NAND Flash probe tip 11월 3월 3월 1월 • Begun MP stage 1 • (200K pins/month) • Complete Qualification • of DRAM WBI probe tip • Started LSI probe tip • development for Flipchip • Complete MP ramp up • (500K pins /month) • Complete Qualification • of Flipchip probe tip

  30. Auto Bonding System ■ Key Map of the System Monitor Pad Align Camera • Full Automatic high accuracy micro assembly system by laser soldering. Laser Controller Laser Beam Head Side View CCD camera Probe Tip Magazine Loader side Welding side Work Table MEMSTip Tray IPCC System Control Computer Keyboard Control Panel

  31. ■ Production History Completed Auto Bonding System Setup 2009 Nov. 2009 Dec. Started Mass production of 32nm NAND flash probe card 2010 March Started Mass production of 21nm NAND flash probe card H-MEMS P/Card Mass Production 2010 Oct • Launched Rainbow P/Card for 12 Inch DRAM WBI 2011 April • Capacity 700K pins /month

  32. Simulation ■ Signal Integrity Component Modeling for Signal Lines with Field Solver(2D or 3D) Tester DUT ZIF Connector Tester ZIF Connector Main Board Interposer Sub Board MEMS Probe DUT(Die) Interposer Probe FPGA Board Connector Relay Board Connector Main Board Probe Head Assumption Assumption FPGA Board Relay Board FPGA Relay Probe Card tp CL Eye-Diagram tf td tr

  33. ■ Power Integrity Decoupling Capacitor VCC GND Burst Current Flows V H L Decoupling Capacitor < Layout about Decoupling Capacitor > VCC GND Burst Current Flows V H Noise = 70mV L These Inductance were screened out

  34. ■ PI & SI Software • Measurement Equipment : TDR, Digital Oscilloscope

  35. ■ Parts & Assembly Simulation 1. Structure Analysis 2. Thermal Analysis Needle z y Wafer

  36. 3. Flow Simulation

  37. Production Capacity ▷Memory [Kpins/Month]

  38. ▷LSI [Kpins/Month]

  39. Thank you!