2 ASIC Design Methodology

1. 2 ASIC Design Methodology 1) Definition 2) Design Representation(Top-down, B-S-P) 3) Design Objectives 4) ASIC Types 5) ASIC Design Process 6) Cost Analysis Contents

2. 1) Definition of ASIC • ASIC is application-specific. (vs. General-Purpose, Commodity or Standard IC i.e., memory, microprocessor) • ASIC can become ASSP(Application-Specific Standard Product) if volume becomes large.(ex:MODEM, disk controller) • ASIC integrates many block in one chip. (Today’s board is tomorrow’s ASIC.)

3. 2) Design Representation using Gajski’s Y-chart

4. 3) Design Objectives low performance FPGA Gate array C BIC NRE Cost Full-custom high long PTAT(Product Turn-around Time) Per-chip cost(chip area) high

5. 4) ASIC Types • PLD PAL(device name), PLA(circuit style) ; all AND-OR plane logic(two-level logic) • FPGA • Gate Array(with or without embedded block, ex;memory) • Standard Cell(w. or w/o macro) • Compiled block ; datapath, RAM, ROM, multiplier • Full - Custom Semi-custom IC (ASIC in narrow sense)

6. Important elements in ASIC Design System specification in-house CAD tools IP ASIC design library Commercial CAD tools ASIC foundry

7. The macrocells typically consist of programmable array logic followed by a flip-flop or latch. The macrocells are connected using a large programmable interconnect block. Programmable logic device(PLD) die.

8. All FPGAs contain a regular structure programmable interconnect. Field-programmable gate array(FPGA) die.

9. Two-step manufacturing Full-custom fabrication Semi-custom fabrication Standard phase custom phase

10. Standard & Custom Masks Two-step manufacture : First(deep) processing steps Base wafers Standard masks Custom masks Customization : contacts & metal layers ASIC

11. Architecture Specifications • Master array = core + I/O pads • Core : - macro-architecture • number & distribution of basic core cells • embedded(specialized) structures - micro-architecture • isolation method : gate or oxide isolation • predefined channels or channelless layout • available devices : transistors, capacitors, resistors, … • NMOS/PMOS transistor count ratio • number of contacts to each transistor gate, source or drain • spacing between transistors, or transistor pitch • identical or variable size transistors • relative size of the NMOS and PMOS transistors • layout of the basic core cell • I/O pads - number, functional capabilities, size, ...

12. Comparison of Various ASIC Methodologies Rapidlychanging designs low volume low complexity • PLDs, PALs, EPLDs : < 2K gates field programmable AND/OR arrays with latches use (E)EPROM or (anti)fuse devices • field programmable gate arrays(FPGA) : < 5K gates(1972), £ 100K gates(1998) electrically programmable SRAM, antifuse or EPROM devices logic mapped into predefined blocks programmable interconnections • gate arrays, sea-of-gates(SOG) : £ 200K gates personalized with metals & contacts standard cell compiled cells datapath, ROM, RAM • macro-based & full-custom : all mask layers personalized dense & high performance High volume complex stable designs

13. Field Programmable Gate Arrays K • Fill the gap between PALs and classical(mask programmable) gate arrays • architecture : • array of configurable logic blocks(gates, multiplexers, flip-flops) • predefined routing channels filled with interconnection wires • wires are programmable • programming technology : EPROM, anti-fuse, or SRAM. • SRAM : volatile but reconfigurable configuration Xilinx • EPROM : non-volatile and reprogrammable, Altera • anti-fuse circuits : permanent programming Actel • size : up to 10K gate, (now 200K gates) • speed is comparable to PALS.

14. First Generations of Gate Arrays • First gate arrays : • one programmable metal layer • fixed contact locations • extensive use of polysilicon for routing • 2- or 3- transistor cell -> 2- or 3-input NAND (NOR) gates • later improvements : • use several basic cells to implement more complex macros • programmable contacts • second programmable metal layer + vias P N Predefined channel P N

15. Second Generation : Sea-of-Gates • CHANNELLESS LAYOUT • suppression of predefeined channels • array entirely filled up with transistors • connections are routed over unused transistors • GATE ISOLATION vs. OXIDE ISOLATION • suppression of the gaps in the diffusion • continuous strips of diffusion with equally spaced transistors • basic cell = 1N & 1P • electrical isolation made by connecting a gate to VSS(NMOS) or VDD(PMOS) • OTHER VARIANTS & IMPROVEMENTS : • embedded arrays • RAM-compatible basic cell • additional metal layers VDD P N VSS Gate isolation VDD P N VSS Oxide isolation

16. Gate Isolation vs Oxide Isolation • ADVANTAGES OF GATE ISOLATION : • flexibility in macro width(one transistor increment) • density : transistor gate length smaller than diffusion-diffusion distance • full merging of source & drain • PROBLEMS WITH GATE ISOLATION : • N-and P-gate need to be physically separated • on very large & noisy circuits, glitches on power supply lines may weaken the isolation for short times

17. Channelled versus Channelless Array Flexibility in channel definition(position & width) over-the-cell routing higher packing density RAM-compatible supports variable-height cells & macrocells now universally used Routing problem is simpler OK with only one metal

18. Routing Channels Alternate channels : • Simpler • reusability of classical P&R tools • tunable channel width(in fixed increments) • lower density(in terms of gates) • gates are smaller • smaller transistor size Covering channels : • fixed channel width • increased master cell area • large transistor size • both methods can be used together • needs a special macro design

19. Metal Usage • Signal routing : • internal macro connections : metal 1 • external horizontal wires(channels) : metal 1 • external vertical wires : metal 2 • metal 3&4, if any, follow direction of metal 1&2, respectively

20. Metal Usage • power distribution : • primary distribution : horizontal metal 1 lines • secondary distribution : vertical metal 2 lines

21. Embedded Structures Core is generic and supports various customizations reduced master family -> lower price higher flexibility, e.g. RAM size and location need adapted CAD tools A part of the core is dedicated to a special function most often : static RAM but also ROM, A/D or D/A converters, PLL, … also : embedded test structures advantages : optimized function, performance, high density drawback s : less versatile array, need to maintain a larger master family(price !)

22. BiCMOS Master Architecture(1) Higher gate count(CMOS is denser) TTL or ECL I/Os examples : Hitachi 84 NTT 89(reduced voltage on-chip) now abandoned BiCMOS periphery blocks used for clock buffers, level conversion, … CMOS core : 60% - 95% area example : LSI Direct Drive Array(88)

23. BiCMOS Master Architecture(2) Higher flexibility in the use of both devices full digital or mixed applications the most used architecture examples : Motorola, AMCC, Hitachi, TI, Toshiba NEC, Fujitsu Variant of the previous mixed digital/analog applications bipolar part can contain passive elements can be seen as an embedded array example : LSI Logic

24. Standard Cell Layout(W=25mm in l=0.25mm

25. CBIC routing in 2-metal layers

26. control and power signals (metal 2) poly metal 1 Bit 31 metal 2 Bit 30 metal 3 Data buses (metal 3) control signal (metal 2) VDD (metal 2) Bit 2 VSS (metal 2) Bit 1 Bit 0 Tr. gate adder mux inv VDD (metal 1) P diff. 1 bit-slice N diff. VSS (metal 1) Data Buses (metal 3) inverter 2-1 mux Datapath composed of datapath cells Datapath cell = Bit Slice Ç Functional Element

27. 5) ASIC design process

28. 6) Cost Analysis Spreadsheet for fixed cost of FPGA MGA and CBIC

29. Spreadsheet for Variable cost of FPGA MGA and CBIC

30. Product Profit Model