1 / 16

Investigation of Full-Sensor Coverage and Deep Implant Responsible for Charge Multiplication

Explore extending p+ implant coverage to entire sensor and pushing it deeper into bulk for improved performance. Study by Marta Baselga, Colin Parker, and Hartmut Sadrozinski at SCIPP, UC Santa Cruz. Analyzing strip detectors with 80mm pitch and different doping levels.

libby
Download Presentation

Investigation of Full-Sensor Coverage and Deep Implant Responsible for Charge Multiplication

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Strips: p+ implantresponsibleforchargemultiplicationcoversonlypart of thestrip.Investigateextension of p+ tocovertheentire sensor and topushitdeeperintothebulk Marta Baselga, Colin Parker & Hartmut Sadrozinski SCIPP, UC Santa Cruz

  2. Strip detectorsPitch p=80 mm

  3. Pitch=80mm Float Zone 285mm Pitch=80mm 10mm Epitaxial wafer Low resistivity substrate wafer 525mm

  4. Pitch 80um n++ pstop P+ multiplicationimplant pstop AC3 24mm AC6 48mm AC9 62mm

  5. REGULAR STRIPS AC6

  6. Regular Strips(AC 6 FZ Deepannealing)

  7. Electric field of regular strips @1000V(AC 6 FZ Deepannealing)

  8. IV and CV for regular strips(AC 6 FZ Deepannealing)

  9. NEW STRIPS Doping boronpeak 1e15cm^-3 boron at 2um

  10. New strips (boron at 2um fromthesurface) doping boron 1e15cm^-3

  11. New stripselectricfield @1000V doping boron 1e15cm^-3 @2um

  12. IV and CV forstripswithboron @ 2umboron doping 1e15cm^-3

  13. NEW STRIPS Doping boronpeak 1e15cm^-3 at 5um deep

  14. New strips (boron at 5um fromthesurface) doping boron 1e15cm^-3

  15. New stripselectricfield @1000V doping boron 1e15cm^-3

  16. IV and CV forstripswithboron @ 5umboron doping 1e15cm^-3

More Related