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R adiation tolerance of M onolithic A ctive P ixel S ensors (MAPS)

S. Amar, A. Besson, J. Baudot, G. Claus, C. Colledani, G. Deptuch, M.Deveaux , A. Dorokhov, W. Dulinski, A. Gay, M. Goffe, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, C. Hu, K. Jaaskelainen, C. Muentz, M. Pellicioli, N. Pillet, O. Robert, A. Shabetai, M. Szelezniak, J. Stroth,

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R adiation tolerance of M onolithic A ctive P ixel S ensors (MAPS)

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  1. S. Amar, A. Besson, J. Baudot, G. Claus, C. Colledani, G. Deptuch, M.Deveaux, A. Dorokhov, W. Dulinski, A. Gay, M. Goffe, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, C. Hu, K. Jaaskelainen, C. Muentz, M. Pellicioli, N. Pillet, O. Robert, A. Shabetai, M. Szelezniak, J. Stroth, I. Valin, M. Winter (Project coordinator) Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) • Outline: • Operation principle of MAPS • Radiation tolerance against ionising doses (update) • Radiation tolerance against non-ionising doses • Summary Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux (michael.deveaux@ires.in2p3.fr)

  2. Radiation tolerance against non-ionising doses • The measurement procedure: • Chips were irradiated and bonded consecutively • Comparisons were made between irradiated and new chips • Parameters measured were: • Leakage current of the pixels • Noise of the pixels • Charge Collection Efficiency (CCE) by means of a 55Fe-source • Detection efficiency in beam tests (~ 5 GeV e- and 120 GeV Pions) • Data was taken as function of: • The pixel pitch • The thickness of the sensitive volume • „Temperature“ • Region of interest: 1011 – 1013neq / cm² MAPS are highly P-doped, not depleted => No problems with Neff. Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux (michael.deveaux@ires.in2p3.fr)

  3. Leakage current of irradiated MAPS Increase of leakage current after 1013 neq / cm² ? An increase of leakage current is observed. Reasonably low at moderate cooling. of the chip support Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux (michael.deveaux@ires.in2p3.fr)

  4. Impact of the temperature on leakage current Mimosa-15 Preliminary => Cooling helps

  5. Noise of irradiated MAPS T=-20°C T=+20°C MIMOSA-15 Origin of scattering is not understood Noise is reduced by more than 50% at -20°C. Expect additional benefit for combined radiation doses (ionising and non-ionising)

  6. Impact of temperature on the charge collection efficiency Preliminary Substantial systematic uncertainties! Slight trend: Higher temperature => Better CCE BUT: Can also be explained as artefact of higher noise => Not considered as significant today

  7. S/N and det. efficiency Pitch effect on the radiation tolerance of MAPS 20 µm pitch reaches 2x1012 neq (MIMOSA-15) Reducing the pixel pitch is the only known mean to recover CCE Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux (michael.deveaux@ires.in2p3.fr)

  8. Radiation hardness as a function of pixel pitch (at -20°C, < 1 ms integration time ) Friendly speaking preliminary Well established (beam test results) Highest radiation level tested „good“: 2.00E+12 might also be 3.00E+12

  9. Random Telegraph Signal So far observed at doses >> 1011 neq/cm² True hit Signal [ADC] Excitation 2: Noise ~ 33 e- Excitation1: Noise ~ 31 e- Threshold Ground state: Noise ~ 30 e- t [200 = 1s] Leakage current (?) Observed with MIMOSA-2 (3T-Pixel), reproduced with MIMOSA-15 (3T-Pixel)

  10. Potential Danger for SB-Pixels SB-Pixels may adapt themselfes to slow fluctuations. But also to those ones? Really crucial? Will be studied with MIMOSA-18 (in Frankfurt). Expect results early next year.

  11. Temperature Dependence of RTS Cooling helps!

  12. Summary and Conclusion • Non-Ionising radiation damage: • Increases the leakage current of MAPS • Increases the (shot)-noise of MAPS • Reduces the collected charge !!! (Most crucial) • Generates Random Telegraph Signal • Cooling may: • Reduce leakage current and shot noise • Dimm amplitude of Random Telegraph Signal • but has no beneficial effect on charge collection. • Reducing the pixel pitch: • May substantially increase the charge collection • (half the pixel pitch, roughly factor 5 more radiation hardness)

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