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Surface Diffusion and Elasticity in SiGe Heterostructures: A Continuum Approach

This research delves into the mechanisms of surface diffusion and elasticity in SiGe heterostructures using a continuum modeling approach. It covers the critical aspects of quantum dot growth, misfit strain caused by lattice mismatch, and the Asaro-Grinfeld-Tiller instability. The study also addresses the dynamics of surface roughening as a relief method for misfit strain. Through numerical simulations and boundary condition analysis, this work elucidates the equilibrium shapes, chemical potential gradients, and intermixing effects which are fundamental to understanding heterostructure behaviour.

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Surface Diffusion and Elasticity in SiGe Heterostructures: A Continuum Approach

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    1. Surface Diffusion and Elasticity in SiGe Heterostructures: Continuum Approach Martin Burger UCLA

    2. Quantum Dot Growth

    3. SiGe Heterostructures Basic mechanism of growth: Asaro-Grinfeld-Tiller instability Lattice mismatch (4,2 %) causes misfit strain - reliefed by surface roughening

    4. SiGe Heterostructures

    5. PbSe/PbEuTe Heterostructures

    6. InAs/InGaAs/GaAs Heterostructures

    7. Equilibrium Shapes

    8. Continuum Model

    9. Chemical Potential Chemical potential is determined by energy gradient:

    10. Surface Diffusion

    11. Equation for Film Height

    12. Numerical Simulation Supplemented by usual boundary conditions Supplemented by usual boundary conditions

    13. Numerical Solution, 2 D

    14. Simulation, 2 D

    15. Simulation, 2 D

    16. Simulation, 2 D

    17. Simulation, 2 D

    18. Simulation, 2 D

    19. Simulation, 2 D

    20. Numerical Solution, 3 D

    21. Simulation, 3 D

    22. Numerical Solution, 3 D

    23. Intermixing Effects

    24. Dynamic Intermixing

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