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0952794_Ramanathan.ppt

Correlated Oxide Materials for Beyond CMOS Electronics Shriram Ramanathan , Harvard University, DMR 0952794. Exploring ultrafast metal-insulator transition switches utilizing correlated oxides as a paradigm for future computing

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0952794_Ramanathan.ppt

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  1. Correlated Oxide Materials for Beyond CMOS ElectronicsShriram Ramanathan, Harvard University, DMR 0952794 • Exploring ultrafast metal-insulator transition switches utilizing correlated oxides as a paradigm for future computing • Deep understanding of how microstructure and composition of correlated oxides influence their electronic properties is essential • Demonstrated synthesis of high-quality epitaxial vanadium oxide thin films on electron conducting oxide templates • Bias-driven phase transition at room temperature is an encouraging result towards realizing sharp switch characteristics Voltage-driven metal-insulator transition in vanadium dioxide thin films grown on Nb-SrTiO3 single crystal

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