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D. Ding, J.-B. Wang, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang

Determination of internal quantum efficiency in semiconductors suitable for luminescence refrigeration. D. Ding, J.-B. Wang, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang. Center for Semiconductor Optical Refrigeration Department of Electrical Engineering Arizona State University. Sample Design.

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D. Ding, J.-B. Wang, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang

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  1. Determination of internal quantum efficiency in semiconductors suitable for luminescence refrigeration D. Ding, J.-B. Wang, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang Center for Semiconductor Optical Refrigeration Department of Electrical Engineering Arizona State University

  2. Sample Design

  3. Modeling

  4. Model fitting

  5. Internal quantum efficiency

  6. Determination of N, A and ΔF

  7. Internal quantum efficiency vs. ΔF

  8. Comparison of with and without surfactant

  9. InGaAs QWs

  10. Summary • A power and temperature dependent PL measurement is proposed to determine the internal quantum efficiency and recombination coefficients • A set of samples are designed to give almost same absorption for the pumping laser light (He-Ne) • The recycling factor of slab structure is modeled and numerical calculated for various thicknesses • 98.5% internal quantum efficiency is determined for GaAs at 100 K with ΔF = -3.5 kT • The SRH recombination coefficient is determined to be around 2 ~ 7 x 106 /s at a temperature range from 50 K to 200 K • The SRH recombination coefficient is related to the barrier thickness and the surfactant will decrease the SRH recombination

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