slide1
Download
Skip this Video
Download Presentation
K.-C. Liao, A. G. Ismail, L. Kreplak, J. Schwartz, I. G. Hill, Adv. Mater. 2010, in press.

Loading in 2 Seconds...

play fullscreen
1 / 1

K.-C. Liao, A. G. Ismail, L. Kreplak, J. Schwartz, I. G. Hill, Adv. Mater. 2010, in press. - PowerPoint PPT Presentation


  • 63 Views
  • Uploaded on

Designed Organophosphonate Self-Assembled Monolayers Enhance Device Performance of Pentacene-Based Organic Thin-Film Transistors (DMR 0819860) IRG-B: K.-C. Liao, A. G. Ismail, L. Kreplak, J. Schwartz and I. G. Hill.

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about 'K.-C. Liao, A. G. Ismail, L. Kreplak, J. Schwartz, I. G. Hill, Adv. Mater. 2010, in press.' - kamala


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
slide1
Designed Organophosphonate Self-Assembled Monolayers Enhance Device Performance of Pentacene-Based Organic Thin-Film Transistors (DMR 0819860)

IRG-B: K.-C. Liao, A. G. Ismail, L. Kreplak, J. Schwartz and I. G. Hill

Organic thin-film transistors (OTFTs) are compatible with large area fabrication techniques, and they may yield new paradigms for manufacturing that would reduce device costs for large area circuits. Pentacene-based OTFTs are well studied; yet they can be compromised with regard to critical device parameters: on/off ratios, carrier mobilities, sub-threshold performance, and threshold voltages. Surface treatments for the SiO2 gate dielectric can be

effective; typically, however, improvement is realized in only one ofthese critical areas, often to the detriment of the others. We showed that systematic structural modification of self-assembled monolayers of phosphonates (SAMPs) fabricated on SiO2 gate dielectrics can yield pentacene-based devices in which all four critical parameters are enhanced simultaneously.[1] We hypothesize that phosphonate structural motifs enable twodimensionalSAMP surface coverage to translate to a threedimensional one through controlled lateral spacing between vertically oriented acene units, which can affect crystallization of vapor-deposited pentacene. AFM shows that the morphology of the deposited pentacene depends solely on the structure of the underlying SAMP; a simple (anthracene)-phosphonate gives rise to the AFM shown at the left, and a naphthyl-substituted

(anthracene)phosphonate gives rise to the AFM shown in the center. Especially high mobilities (average saturation mobility 2.5cm2/Vs) were recorded for transistors based on the latter SAMP;the cartoon at the right suggests how that SAMP could template

pentacene growth.

K.-C. Liao, A. G. Ismail, L. Kreplak, J. Schwartz, I. G. Hill, Adv. Mater. 2010, in press.

ad