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This study at Kyoto University involves using an oscilloscope and LabView to measure MuTr raw signals in a chamber with specific properties. The gas mixture used is Ar:CO2:CF4=50%:30%:20%, with 1850V HV and total resistance of 10kohm. The pulse shape consists of 3000 samples that are fitted to certain regions after noise subtraction. The analysis includes examining pulse height and charge distributions, decay time, and correlation of pulse characteristics. The study also evaluates the performance of the ASD chip used for trigger purposes.
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MuTr Chamber properties K.Shoji Kyoto Univ.
Measurement of MuTr raw signal Use oscilloscope & LabView Read 1 strip HV 1850V Gas mixture Ar:CO2:CF4=50%:30%:20% Total resistance 10kohm
3000 samples Fit to these region Ground Level Noise Subtract Event-by-event ground level noise subtract Use linear function y=gradient*x+intercept
Detector Capacitance C Total Resistance R=9800ohm ~10Kohm Exp(-t/CR) Fit Error <300nsec CR~2.8usec ⇒ C~300pF (?) Decay time
Pulse Height Charge charge Pulse height Pulse Height and Charge distribution Distribution of 1 Strip Typical Charge is 200fC But I used narrow scintillator for trigger, These distribution has dependence of place
Correlation of Pulse Height & Charge There is clear correlation. But little bit rise where pulse height is low Because of the Noise?
Simple Model Cross mark is Profile of pulseheight&charge Red is Model Line
ASD Chip for MuTr LL1 Trigger 4 Channels for 1 Chip Input Impedance 370ohm Preamp Integration Time 80nsec Preamp gain 0.8mV/fC ENC 2000electrons for 300pF ⇒Analog output Main amp gain 7 Comparator with LVDS output Threshold voltage : common for all 4 channels ⇒Digital output
Expected Response of ASD Chip Input Impedance 370ohm Preamp Integration Time 80nsec Preamp gain 0.8mV/fC C~300pF ⇒ CR~110nsec Analog output Rise time : few~10nsec
Linearity of ASD Chip 1Kohm load Linearity of Analog output is wrong where charge>500fC
From now… • Correlation with neighbor strips • Try to Change HV or Gas mixture • Time Response Leading edge fluctuation from ion drift time<100nsec • ENC 2000electrons for 300pF ~0.3fC Requirement is less than 1% • Can we get 100um resolution with ASD Chip?