Single crystalline Tm 2 O 3 film grown on Si (100) by atomic oxygen assisted molecular beam epitaxy. T. Ji 1 , J. Cui 1 , Y. L. Fan 1 , Z. B. Fang 2 and Z. M. Jiang 1 1 State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
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Single crystalline Tm2O3 film grown on Si (100) by atomic oxygen assisted molecular beam epitaxy
T. Ji1, J. Cui1, Y. L. Fan1, Z. B. Fang2 and Z. M. Jiang1
1State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
2 Department of Physics, Shaoxing University, Shaoxing 31200, China
By the method of multi-step growth, higher capacitance and thus a higher dielectric constant of 10.8 can be obtained. For the absence of the SiO2-x interfacial layer, the leakage current density is also higher.
Single crystal film is evidenced by synchrotron radiation XRD.
SiO2-x interfacial layer is formed during Tm2O3 deposition and removed by annealing.