slide1 n.
Download
Skip this Video
Loading SlideShow in 5 Seconds..
Taking on the Multiscale Challenge Even Small-Scale Victories are Good Len Borucki Digital DNA Lab PowerPoint Presentation
Download Presentation
Taking on the Multiscale Challenge Even Small-Scale Victories are Good Len Borucki Digital DNA Lab

Loading in 2 Seconds...

play fullscreen
1 / 17

Taking on the Multiscale Challenge Even Small-Scale Victories are Good Len Borucki Digital DNA Lab - PowerPoint PPT Presentation


  • 73 Views
  • Uploaded on

Taking on the Multiscale Challenge Even Small-Scale Victories are Good Len Borucki Digital DNA Lab Motorola, Inc. Phoenix, AZ. Why do multiscale modeling? - Perspective from semiconductor manufacturing. 0.2 m. 0.1 m m. wafer. Deposited Film. T Merchant. Typically, tool “knobs”

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about 'Taking on the Multiscale Challenge Even Small-Scale Victories are Good Len Borucki Digital DNA Lab' - glyn


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
slide1

Taking on the Multiscale Challenge

Even Small-Scale Victories are Good

Len Borucki

Digital DNA Lab

Motorola, Inc.

Phoenix, AZ

slide2

Why do multiscale modeling? - Perspective from semiconductor manufacturing.

0.2 m

0.1 mm

wafer

Deposited Film

TMerchant

Typically, tool “knobs”

control tool physics on the

~0.1-1 meter scale

However, the goal is to control

an outcome at the micron scale or

below over a wide area of the wafer.

Tools are expensive, so optimizing their use is important.

slide3

Several spatial scales may be involved.

~1 cm

Equipment or Wafer Scale

Die (Chip) Scale

Feature Scale

Differences in feature packing densities within a die or across a wafer may affect local feature scale uniformity

due to depletion of reactants or other effects related to feature density.

slide7

Starting at the atomic level, the goal of modeling may be to predict structure

and properties at much larger length and time scales. There are huge gaps.

Electronic properties

Void

Nucleation

Film thickness ~10-9-~10-8 m

D. Richards

A. Korkin, N. Tanpipat

~10-10 m and ~10-12 sec

Film precursors.

Gas phase and surface

chemistry.

Metal

Lifetime

C-L Liu

Film nucleation, growth, grain

structure and transport properties.

~10-9 - ~10-5 m and ~102 sec

~10-4 - ~10-3 m and ~104 - ~108 sec

slide8

Facet growth during physical vapor

deposition with surface diffusion. KLMC.

Activation energies for diffusion along and

between facets. Embedded atom method.

Challenge: Film Nucleation, Growth

Grain Nucleation (FCC nuclei with {100}, {111} or {110} facets, randomly rotated and cut)

Isotropic Source

Grain growth

for an isotropic

or unidirectional

source. String

algorithm, not a

level set method.

Source: J. Zhang, J. Adams, Arizona State University

See http://ceaspub.eas.asu.edu/cms/

slide10

= Grain Boundary Width

Tilt Angle

W=Line Width

j

A

D

x

Calculating transport properties of large polycrystalline structures - an example.

This very simple

model produces a

fairly convincing

statistical failure

time distribution.

slide13

Joule Heating in a Snake

IMA Workshop on Multiscale Models for Surface Evolution and Reacting Flows June 5-9, 2000

slide14

A Different Reacting Flow Multiscale Problem: Chemical-Mechanical Polishing

A chemically reactive slurry

containing ~0.1 mm

particles is sprayed on a rotating

polyurethane pad in front of

a rotating wafer. The slurry

attacks the surface layer on the

wafer, allowing the particles

to more easily abrade and

smooth the layer.

slide15

Chemical-Mechanical Polishing

The polyurethane pad contains

numerous voids averaging ~30

microns in diameter.

Voids exposed at the surface fill with slurry. The slurry

layer is very thin in highly compressed areas between

the voids. Slurry particles probably contact the wafer

in these compressed regions.

slide16

Chemical-Mechanical Polishing

Shan, Georgia Tech

Somehow, this surface structure plays a

role in the details of the development of

suction fluid pressure under the wafer.

The suction pressure may in turn affect the

uniformity of the removal rate on the wafer

scale.

Question: How to describe the pad surface and utilize the information in a model with a

longer length scale; eg. the Reynolds equation?

slide17

Summary

Multiscale models either

Start at equipment scale and connect with the feature scale.

Start at the atomic level and progress toward longer length and time scales.

Very significant gaps exist, for example,

Modeling of nucleation and growth of polycrystalline films, particularly in 3D

and with topography.

Prediction of properties of polycrystalline materials.

Better mathematical and numerical methods.