1 / 58

CHAPTER 10

CHAPTER 10. Master Figure. Fig. 10.1. Fig. 10.2. Fig. 10.3. Figs. 10.4 a, b. (a). (b). Fig. 10.5. Fig. 10.6. PVD Cu Seed. Cu Surface Treatment CVD Dielectric. Via Lithography and Etch. Cu Electrofill and Anneal. Line Lithography and Etch, TaN barrier. Cu CMP TaN Clean

Download Presentation

CHAPTER 10

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. CHAPTER 10

  2. Master Figure

  3. Fig. 10.1

  4. Fig. 10.2

  5. Fig. 10.3

  6. Figs. 10.4 a, b (a) (b)

  7. Fig. 10.5

  8. Fig. 10.6 PVD Cu Seed Cu Surface Treatment CVD Dielectric Via Lithography and Etch Cu Electrofill and Anneal Line Lithography and Etch, TaN barrier Cu CMP TaN Clean Post CMP Clean

  9. Fig. 10.7

  10. Fig. 10.8

  11. Fig. 10.9

  12. Fig. 10.10

  13. Fig. 10.11

  14. Fig. 10.12

  15. Fig. 10.13

  16. Fig. 10.14

  17. Fig. 10.15 Resistance (m), Capacitance (fF), Inductance (pH)

  18. Fig. 10.16

  19. Fig. 10.17

  20. Fig. 10.18

  21. Fig. 10.19

  22. Si Chip Si Chip Failure sites – no strain concentration Critical failure site - strain concentration Substrate Substrate Fig. 10.20

  23. Fig. 10.21

  24. Fig. 10.22

  25. Fig. 10.23

  26. Fig. 10.24

  27. Fig. 10.25

  28. Stress Compensation Layer Fig. 10.26

  29. Fig. 10.27

  30. Fig. 10.28

  31. 30 25 20 Current Crowding Ratio 15 10 5 0 Cr/thin Cu Al/Ni(V)/Cu Thick Cu Thick Ni Cu/Thick Ni UBM Fig. 10.29

  32. Figs. 10.30 a, b, c (a) (b) (c)

  33. Fig. 31

  34. Fig. 10.32 Conc.of noble nutal % Ag or % Cu inside Sn Current Density Additives

  35. Fig 10.33 Al trace UBM Current crowding at solder Passivation Less current crowding at solder

  36. Fig. 10.34

  37. Fig. 10.35 100 A:Electroless Ni- Immersion Au B:Solder Plating C:Gold Plating C B 50 PRICE PER BUMPED WAFER A STUD BUMPING COST 0 150,000 300,000 BUMPS PER WAFER

  38. Figs. 10.36 a, b (a) (b)

  39. Fig. 10.37

  40. Fig. 10.38

  41. Fig. 10.39

  42. Fig. 10.40

  43. Fig. 10.41

  44. Fig. 10.42

  45. Fig. 10.43

  46. Fig. 10.44

  47. Fig. 10.45

  48. Fig. 10.46

  49. Fig. 10.47

  50. Fig. 10.48 CNT Si Substrate Solder UBM Sputter metal Substrate Si Flip and reflow Substrate Remove Si for CNT transfer Substrate

More Related