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Semiconductor Device Modeling and Characterization EE5342, Lecture 25 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 25 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. MOSFET Device Structre Fig. 4-1, M&A*. n-channel enh. circuit model. G. RG. C gd. RDS. C gs. RD. S. D. C bd. RB. C bs. Idrain. C gb.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 25 -Sp 2002

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  1. Semiconductor Device Modeling and CharacterizationEE5342, Lecture 25 -Sp 2002 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. MOSFET DeviceStructre Fig. 4-1, M&A*

  3. n-channel enh.circuit model G RG Cgd RDS Cgs RD S D Cbd RB Cbs Idrain Cgb DSS DSD RB B

  4. L = Ch. L. [m] W = Ch. W. [m] AD = Drain A [m2] AS = Source A[m2] NRD, NRS = D and S diff in squares M = device multiplier SPICE mosfet Model Instance CARM*, Ch. 4, p. 290

  5. SPICE mosfet model levels • Level 1 is the Schichman-Hodges model • Level 2 is a geometry-based, analytical model • Level 3 is a semi-empirical, short-channel model • Level 4 is the BSIM1 model • Level 5 is the BSIM2 model, etc.

  6. SPICE ParametersLevel 1 - 3 (Static)

  7. SPICE ParametersLevel 1 - 3 (Static) * 0 = aluminum gate, 1 = silicon gate opposite substrate type, 2 = silicon gate same as substrate.

  8. SPICE ParametersLevel 1 - 3 (Q & N)

  9. Level 1 Static Const.For Device Equations Vfb = -TPG*EG/2 -Vt*ln(NSUB/ni) - q*NSS*TOX/eOx VTO = as given, or = Vfb + PHI + GAMMA*sqrt(PHI) KP = as given, or = UO*eOx/TOX CAPS are spice pars., technological constants are lower case

  10. Level 1 Static Const.For Device Equations b = KP*[W/(L-2*LD)] = 2*K, K not spice GAMMA = as given, or = TOX*sqrt(2*eSi*q*NSUB)/eOx 2*phiP = PHI = as given, or = 2*Vt*ln(NSUB/ni) ISD = as given, or = JS*AD ISS = as given, or = JS*AS

  11. Level 1 Static Device Equations vgs < VTH, ids = 0 VTH < vds + VTH < vgs, id = KP*[W/(L-2*LD)]*[vgs-VTH-vds/2] *vds*(1 + LAMBDA*vds) VTH < vgs < vds + VTH, id = KP*[W/(L-2*LD)]*(vgs - VTH)^2 *(1 + LAMBDA*vds)

  12. SPICE ParametersLevel 2

  13. SPICE ParametersLevel 2 & 3

  14. Level 2 StaticDevice Equations Accounts for variation of channel potential for 0 < y < L For vds < vds,sat = vgs - Vfb - PHI + g2*[1-sqrt(1+2(vgs-Vfb-vbs)/g2] id,ohmic = [b/(1-LAMBDA*vds)] *[vgs - Vfb - PHI - vds/2]*vds -2g[vds+PHI-vbs)1.5-(PHI-vbs)1.5]/3

  15. Level 2 StaticDevice Eqs. (cont.) For vds > vds,sat id = id,sat/(1-LAMBDA*vds) where id,sat = id,ohmic(vds,sat)

  16. Level 2 StaticDevice Eqs. (cont.) Mobility variation KP’ = KP*[(esi/eox)*UCRIT*TOX /(vgs-VTH-UTRA*vds)]UEXP This replaces KP in all other formulae.

  17. SPICE ParametersLevel 3

  18. Generate outputs duplicating any 8 of the following 14 figures in A&M* Figure 4-7a and b, Figure 4-8a and b, Figure 4-9a and b, Figure 4-10, Figure 4-11a only, Figure 4-12a only, Figure 4-13, Figure 4-15, Figure 4-19, Figure 4-20, Figure 4-23 Project 4Part 1

  19. 4-7a (A&M)

  20. Figure 4-7b (A&M)

  21. Figure 4-8a (A&M)

  22. Figure 4-8b (A&M)

  23. 2. Generate outputs duplicating Fig 9.9 in M&K* 3. For each simula-tion, give the com-plete list of model parameters used. Project 4Parts 2, 3, and 4 4. Give a brief discussion of how Level 1, 2, and 3 are selected by Pspice depending on the parameter set used.

  24. Body effect data Fig 9.9**

  25. References • CARM = Circuit Analysis Reference Manual, MicroSim Corporation, Irvine, CA, 1995. • M&A = Semiconductor Device Modeling with SPICE, 2nd ed., by Paolo Antognetti and Giuseppe Massobrio, McGraw-Hill, New York, 1993. • M&K = Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986.

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