semiconductor device modeling and characterization ee5342 lecture 30 spring 2003 l.
Download
Skip this Video
Loading SlideShow in 5 Seconds..
Semiconductor Device Modeling and Characterization EE5342, Lecture 30 Spring 2003 PowerPoint Presentation
Download Presentation
Semiconductor Device Modeling and Characterization EE5342, Lecture 30 Spring 2003

Loading in 2 Seconds...

play fullscreen
1 / 19

Semiconductor Device Modeling and Characterization EE5342, Lecture 30 Spring 2003 - PowerPoint PPT Presentation


  • 257 Views
  • Uploaded on

Semiconductor Device Modeling and Characterization EE5342, Lecture 30 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Gummel-Poon Static npn Circuit Model. Intrinsic Transistor. C. R C. I BR. B. R BB. I LC. I CC - I EC = {IS/Q B }*

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about 'Semiconductor Device Modeling and Characterization EE5342, Lecture 30 Spring 2003' - Samuel


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
semiconductor device modeling and characterization ee5342 lecture 30 spring 2003

Semiconductor Device Modeling and CharacterizationEE5342, Lecture 30Spring 2003

Professor Ronald L. Carter

ronc@uta.edu

http://www.uta.edu/ronc/

gummel poon static npn circuit model
Gummel-Poon Staticnpn Circuit Model

Intrinsic

Transistor

C

RC

IBR

B

RBB

ILC

ICC -IEC = {IS/QB}*

{exp(vBE/NFVt)-exp(vBC/NRVt)}

IBF

B’

ILE

RE

E

gummel poon npn model equations
IBF = IS expf(vBE/NFVt)/BF

ILE = ISE expf(vBE/NEVt)

IBR = IS expf(vBC/NRVt)/BR

ILC = ISC expf(vBC/NCVt)

ICC -IEC = IS(exp(vBE/NFVt - exp(vBC/NRVt)/QB

QB= {+ [+ (BFIBF/IKF + BRIBR/IKR)]1/2}  (1 - vBC/VAF - vBE/VAR )-1

Gummel Poon npnModel Equations
vbic model overview 5
VBIC Model Overview [5]
  • Self-heating effects included
  • Improved Early effect modeling
  • Quasi-saturation modeling
  • Parasitic substrate transistor modeling
  • Parasitic fixed (oxide) capacitance modeling
  • An avalanche multiplication model included
  • Base current is decoupled from collector current
cad tools support for vbic
CAD Tools Support for VBIC
  • Hspice [4]
    • Does not support PNP device
    • Does not scale with “Area” and “M” terms
  • Spectre [5]
    • Support both NPN and PNP devices
    • scale with “Area” and “M” term
  • HPADS
    • No temperature nodes (“dt” and “tl”), so unable to simulate thermal coupling effects
temperature designations for vbic

Parameters Description

Spectre [4]

Hspice [5]

Name

Default

Name

Default

Temperature rise of the device from ambient

trise

0

dtemp

0

Ambient temp.

temp

27

temp

25

Parameters measurement temperature

tnom

27

tnom

25

tref

27

Temperature Designations for VBIC
using vbic in spectre 5
Using VBIC in Spectre [5]

Name c b e [s] [dt] [tl] ModelName parameter=value ...

  • Selft=1 and Rth>0 to enable Self-heating
  • 1 volt at the temperature nodes = 1 degree in temperature
  • “tl” node represents the initial local temperature of device which always corresponds to trise+temp
  • “dt” node represents the rise above trise+temp caused by thermal dissipation, whose value equals V(dt)-V(tl)
  • Device temperature=V(dt)-V(tl)+trise+temp
using vbic in cadence
Using VBIC in Cadence
  • Need explicit external temperature nodes in the symbol to model inter-device thermal coupling by
    • Connecting thermal network between “dt” nodes, or
    • Adding VCVS between “tl” and “tlr” node
  • Customized VBIC 6-terminal (5-pin) symbol
model conversion
Model Conversion
  • Most BJTs are defined with SGP model
  • A conversion from SGP to VBIC is needed
  • Only approximate conversion is possible
  • Some parameters are left unmapped such as Rth and Cth
  • Two approaches are provided
    • Manual conversion — done empirically andneedLocal Ratio Evaluation [2]
    • Program conversion — “official” program sgp_2_vbic[3]
parameters mapping by sgp 2 vbic

VBIC

mapping

VBIC

mapping

VBIC

mapping

Rcx

Rc

Mc

Mjc

Xtf

Xtf

Rci

0

Cjcp

Cjs

Vtf

Vtf

Rbx

Rbm

Ps

Vjs

Itf

Itf

Rbi

Rb-Rbm

Ms

Mjs

Tr

Tr

Re

Re

Nei

Nf

Td

Tf·Ptf/180

Is

Is

Iben

Ise

Ea

Eg

Nf

Nf

Nen

Ne

Eaie

Eg

Nr

Nr

Ibei

Is/Bf

Eaic

Eg

Fc

Fc

Ibci

Is/Br

Eane

Eg

Cje

Cje

Nci

Nr

Eanc

Eg

Pe

Vje

Ibcn

Isc

Xis

Xti

Me

Mje

Ncn

Nc

Xii

Xti-Xtb

Cjc

Cjc·Xcjc

Ikf

Ikf

Xin

Xti-Xtb

Cjep

Cjc(1-Xcjc)

Ikr

Ikr

Kfn

Kf

Pc

Vjc

Tf

Tf

Afn

Af

Parameters Mapping by sgp_2_vbic
  • Early Effect model is different
  • Need Vbe, Vbc to solve the 3 equations below
heterojunction electrostatics
HeterojunctionElectrostatics

Eo

qfp

EC,p

qfn

DEC

EC,n

EF,p

EF,n

EV,p

EV,n

DEV

xp

-xn

0

final exam
Final Exam
  • Review a paper on “Device Parameter Extraction”.
  • Paper to be reviewed will be posted Monday, May 5, 2003
  • Comment on Device Physics used.
  • Critique the extraction procedures
    • Assumptions
    • Consistency of method w.r.t. assumptions
  • One page solution due 11 AM, Thur., May 8
references
References
  • Fujiang Lin, et al, “Extraction Of VBIC Model for SiGe HBTs Made Easy by Going Through Gummel-Poon Model”, from http://eesof.tm.agilent.com/pdf/VBIC_Model_Extraction.pdf
  • http://www.fht-esslingen.de/institute/iafgp/neu/VBIC/
  • Avanti Star-spice User Manual, 04, 2001.
  • AffirmaSpectre Circuit Simulator Device Model Equations
  • Zweidinger, D.T.; Fox, R.M., et al, “Equivalent circuit modeling of static substrate thermal coupling using VCVS representation”, Solid-State Circuits, IEEE Journal of , Volume: 2 Issue: 9 , Sept. 2002, Page(s): 1198 -1206