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PSI tests - Comparator Results. Devices under test and beam conditions Schematics Results Input bias current Output drift I-V acquisition of the comparator outputs Gain Response time SET. Devices under test and beam conditions. DUT LM339D, LP339M and LM139 : SET LM339D and LP339M

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psi tests comparator results
PSI tests - Comparator Results
  • Devices under test and beam conditions
  • Schematics
  • Results
    • Input bias current
    • Output drift
    • I-V acquisition of the comparator outputs
    • Gain
    • Response time
    • SET
slide2

Devices under test and beam conditions

  • DUT
    • LM339D, LP339M and LM139:
      • SET
      • LM339D and LP339M
      • Input biasmeasurements
      • LM339D:
      • Output drift
      • I-V acquisition of the comparator outputs
      • Gain
      • Response time
  • Beam conditions:
    • PIF facility at PSI
      • Proton energy was set to 230 MeV
      • Dose rate : 7.5 rad/s (270 Gy/h)
schematics
Schematics

SET evaluation

  • From literature, the lowest ΔVin gives the highest chance to get SETs
schematics1
Schematics

Input bias current

schematics2
Schematics

Output drift / Response time / Gain / I-V measurements

  • 4 kinds of measurements performed:
    • Output drift by applying a constant V(-) during irradiation
    • During test breaks:
      • Gain by applying a saw tooth at V(-)
      • Response time by supplying V(-) with a square wave
      • I-V curves by using a Source Measure Unit (Keithley)
input bias current
Input Bias Current
  • LM339D
  • Vin > 0
  • V(-) = 7.5V
  • I(+) = 75 nA → V(+) = 7.5 V
  • 1st Run
  • Up to 80 Gy
  • At 80 Gy run was stopped
  • Change supply voltage from:
    • +/- 15V to 0/34V
input bias current1
Input Bias Current
  • 2nd Run
  • Vin > 0
  • V(-) = 17V
  • I(+) = 170 nA → V(+) = 17 V
  • At ≈ 155 Gy → I(+)max is exceeded (250 nA)
input bias current2
Input Bias Current
  • LP339M
  • At ≈ 57 Gy → I(+)max is exceeded (25 nA)
output drift
Output Drift
  • Voutinit set to –Vcc (-15V)
  • Test break :
    • Othermeasurements (Gain etc…)
    • Trend of the Vout variation vs dose:
      • Vout tends to lower values
      • From 0 to 300Gy:
        • Voutdriftedfrom:
        • -14.927 V to -14.895 V (32 mV)
  • LM339D
  • Can be assumed as very small
  • Datasheet affords no information concerning the allowed drift
i v measurements of the comparator outputs
I-V measurements of the comparator outputs
  • LM339D
  • Test break :
    • I-V measurements
    • Source-Measure Unit (Keithley)
    • Inject I and measureVout
i v measurements of the comparator outputs1
I-V measurements of the comparator outputs
  • A trend of the output is observable:
    • I-V curves → Lower values of Ic vs Dose
  • LM339D

Breakdown

  • Reasons:
    • β (output transistor) decreased
    • Current source isdamaged

Active field of the transistor

slide12
Gain
  • Test break :
    • V(-) → SawtoothwaveformΔV = 10mV
    • V(+) → Ground
slide13
Gain
  • Specifications:
  • Gainmin = 50V/mV
  • Gain of the 2 irradiatedcomparatorsdecrease vs dose
  • Variation of the reference Gainis due to the limitedresolution of the scope to measure Vin.
  • The increase of Vin is due to the input offset
  • As dose increases, ΔVin increases to change the output state
  • → Lowresolutionisless dominant
  • Switching voltage increases with dose.
response time
Response time
  • A step from -100mV to +100mV was applied on V(-).
  • Results show that response time increases vs dose with respect to the reference:
      • Rising time can be acceptable depending on the application
  • 50% after a TID of 150 Gy (from 2.1 µs to 3 µs)
  • 220% after a TID of 300Gy (from 2.1 µs to 4.75 µs)
summary of the results
Summary of the Results
  • The analysed parameters show a degradation. In some cases the datasheet limit is exceeded
conclusions
Conclusions
  • No SET (>15 ns and > 100 mV) have been observed for any of the DUTs.
  • The analysed parameters show a degradation
  • In some cases the datasheet limit is exceeded as shown in the previous table
  • The degradation can be tolerated depending on the application