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Understanding Radiation Response in Advanced Semiconductors

Explore the impact of complex material systems on radiation response in sub-100 nm semiconductor structures. The research focuses on single-event effects and dose enhancement, aiming to advance knowledge on nuclear reactions and carrier motion.

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Understanding Radiation Response in Advanced Semiconductors

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  1. Impact of Complex Material Systems on the Radiation Response of Advanced Semiconductors Robert A. Reed Institute for Space and Defense Electronics School of Engineering Vanderbilt University

  2. Overview • Introduction • Identifying Key Issues • Research Program Background • Technical Objectives • Approach • Expected Research Results • Technology Transfer

  3. Introduction • Today’s integrated circuits arefabricated using complex materialsystems • Multi-layer, planar copper metal traces • Tungsten interconnection • High-k dielectrics • Goal of this work: • Advance the state-of-knowledge pertaining to the impact of complex material systems on the radiation response of sub-100 nm semiconductor structures

  4. Key Issues • Two key areas of research: • Basic mechanisms for single event effects (SEEs) • Increased absorbed dose via dose enhancement (DE)

  5. SEEs: Background • Physical mechanisms for SEEs • Ionizing radiation-induced energy deposition within the semiconductor, • Initial electron-hole pair generation, recombination and thermalization, • Carrier transport within the semiconductor, • The response of the device and circuitto the motion of the electron-hole pair distribution. • The goal of the proposed SEE work is to develop an understanding of the impact that complex material systems have on the first three mechanisms • Nuclear Reactions • Carrier Generation and motion

  6. Nuclear Reactions:Background • Ion-Ion nuclear reactions in non-silicon material near the sensitive volume contribute to the soft error response Warren et al. 2005, Dodd et al., TNS 2007, Reed et al. TNS 2007

  7. Nuclear Reactions • Technical Objectives: • Measurement of energy deposition from reactions • Approach: Shaping Amplifier Multi-Channel Analyzer Charge Sensitive Amplifier Device Under Test COUNTS ENERGY (KeV)

  8. Nuclear Reactions • Candidate detectors: • Expected Results: • Identification of critical materials in complex material systems • Provide experimental data for simulation effort define in previous talk • SOI PIN Diode: • Various amounts of metals • Université Catholique de Louvain Photodiode: - Deposit various materials on diode - NASA MSFC and GSFC

  9. Carrier Distribution • Background: Simulation of delta ray production using MC code from SOREQ MRED simulation of delta ray production for 100 MeV protons • Technical Objectives: • Experimental study of carrier generation and comparison to theories • Review carrier motion theories

  10. Carrier Generation Array of SOI collection volumes • Approach: • Build stacked array of detectors • VU space awarded on DARPA 3D SOI run • Measure response • Compute energy deposition spectra (MRED and SOREQ) • Identify shortcoming of carrier generation theories • Review ultrafast nonlinear-optical techniques to study carrier relaxation processes (NRL) • Expected Results: • Identify shortcoming of carrier generation theories

  11. Free Carrier Motion • Approach: • Review current carrier motion theories • Expected Results: • Identify shortcoming of carrier motion theories

  12. Key Issues • Two key areas of research: • Basic mechanisms for single event effects (SEEs) • Increased absorbed dose via dose enhancement (DE)

  13. Dose Enhancement: Background D. E. Beutler, et al. IEEE Trans. Nucl. Sci., 1987.

  14. Dose Enhancement: Background D. E. Beutler, et al. IEEE Trans. Nucl. Sci., 1987.

  15. Dose Enhancement • Technical Objectives: • Develop and validate simulation methodology for dose enhancement effect • Approach: • Determine simulation methodology for dose enhance effects using MRED • Perform dose enhancement simulations and compare to existing experimental data • Research to extend the dose enhancement simulations to highly • Expected Results • Simulation tool to study DE • Better understanding of the implications of high-Z materials near active devices for advance semiconductors

  16. Summary of Research • Goal: Advance the state-of-knowledge pertaining to the impact of complex material systems on the radiation response of sub-100 nm semiconductor structures

  17. Technology Transfer • ISDE Engineering • Collaborative R&D, e.g. NRL/Vanderbilt • NASA MSFC/Vanderbilt CREME-MC Site • DoD vendor relationships • NASA Center collaborative R&D • Through students

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