Analysis of Semiconductor Behavior in Al-doped Trilayer: DOS Study

Feb 28, 2025

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This study investigates the Density of States (DOS) in Al-doped trilayer. The top panel depicts semiconducting behavior with a visible gap to the right of the Fermi energy (EF), while the bottom panel shows metallic properties in the spin-down channel. The EF cuts finite DOS in this analysis.

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Analysis of Semiconductor Behavior in Al-doped Trilayer: DOS Study

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ECCS 1232275_Fong_ECCS 2014 Highlight Density of states (DOS) of Al-doped trilayer. The top panel is for the spin-up states and exhibits semiconducting behavior. The gap is shown at the right of the vertical line at 0 indicating the Fermi energy, EF, The bottom panel is for the spin-down channel showing metallic properties. EF cuts finite DOS.