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Amplification - PowerPoint PPT Presentation


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R d. I D. V ds. V gs. Amplification. I D. I D. Small R d. Slope. Q point. Large R d. Q point. V gs. V ds. R d. I D. V ds. V gs. Power Dissipation. I D. I max. V max. V ds. CD4007. * CD4007 NMOS and PMOS transistor SPICE models * Typical - Typical Condition

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amplification

Rd

ID

Vds

Vgs

Amplification

ID

ID

Small Rd

Slope

Q point

Large Rd

Q point

Vgs

Vds

power dissipation

Rd

ID

Vds

Vgs

Power Dissipation

ID

Imax

Vmax

Vds

cd4007
CD4007

* CD4007 NMOS and PMOS transistor SPICE models

* Typical - Typical Condition

.model MbreakND NMOS

+ Level=1 Gamma= 0 Xj=0

+ Tox=1200n Phi=.6 Rs=0 Kp=111u Vto=2.0 Lambda=0.01

+ Rd=0 Cbd=2.0p Cbs=2.0p Pb=.8 Cgso=0.1p

+ Cgdo=0.1p Is=16.64p N=1

*The default W and L is 30 and 10 um respectively and AD and AS

*should not be included.

.model MbreakPD PMOS

+ Level=1 Gamma= 0 Xj=0

+ Tox=1200n Phi=.6 Rs=0 Kp=55u Vto=-1.5 Lambda=0.04

+ Rd=0 Cbd=4.0p Cbs=4.0p Pb=.8 Cgso=0.2p

+ Cgdo=0.2p Is=16.64p N=1

*The default W and L is 60 and 10 um respectively and AD and AS

*should not be included.

2n7000
2N7000

From DataSheet: (~2.5um technology)

*2N7000 SPICE MODEL

*

.MODEL 2N7000 NMOS (LEVEL=3 RS=0.205 NSUB=1.0E15

+DELTA=0.1 KAPPA=0.0506 TPG=1 CGDO=3.1716E-9

+RD=0.239 VTO=1.000 VMAX=1.0E7 ETA=0.0223089

+NFS=6.6E10 TOX=1.0E-7 LD=1.698E-9 UO=862.425

+XJ=6.4666E-7 THETA=1.0E-5 CGSO=9.09E-9 L=2.5E-6

+W=0.8E-2)

.ENDS

*

For large currents, Id-Vgs is approximately linear (dotted line)

For small currents (<100mA) the behavior is parabolic

2n70006
2N7000

Pdiss=400mW

measuring parameters g m v t
Measuring Parameters gm, Vt
  • This is a simple method for estimating device parameters
  • Use diode-connected device (forces operation in saturation)
  • With an ammeter, vary the supply voltage until the desired bias current is achieved, and record the gate voltage Vgs
  • Adjust Vdd so that Vgs changes by a small amount (say 50mV), and record the resulting change in current
  • Continue varying the gate voltage until the current increases by a factor of 4. If the device follows a parabolic law, this means that the (Vgs-Vt) must have changed by a factor of 2

Vdd

A

Vout

For r = 2:

common source amps
Common Source Amps

Vdd

Vdd

Rd

Rd

Rg1

Rg1

Rgen

Vout

Vout

Vin

RL

Vgen

Rg2

Rg2

Rgen

gmvin

gmvin

Vin

Rin

vin

Rout

Vout

Vgen

Rin

vin

Rout

RL

lab circuits
Lab Circuits

+10 V

+10 V

220 Ω

100 kΩ

220 Ω

10 μF

Vout

100 kΩ

10 μF

Vout

10 μF

Vin

10 μF

Vin

10 kΩ

10 kΩ

Rg1

Rg1

100 Ω

10 μF

common source amplifier
Common Source Amplifier

Vdd

Rd

Rg1

Rsig

Vout

RL

Vsig

Rg2

Rs

common gate amplifier

Vdd

G

D

Rd

gmvgs

S

D

1/gm

Vout

gmvin

1/gm

vin

S

Vin

G

Id

gmvin

Vin

1/gm

vin

Rd

Vout

Common Gate Amplifier
common gate amplifier12
Common-Gate Amplifier

Vdd

Rd

Rg1

Vout

Rg2

RL

Rgen

Vgen

Rs

Rgen

gmvin

Vgen

Rin

vin

Rout

RL

lab experiment
Lab experiment

+10 V

220 Ω

Rg1

10 μF

10 μF

Vout

100 kΩ

10 kΩ

Vin

Rs

100 μF

100 Ω

source follower
Source Follower

Vdd

Rd

Rg1

Rgen

Vout

Vgen

Rg2

Rs

RL

cs resistive feedback
CS Resistive Feedback

Vdd

Vdd

Rd

Id

Rf

Rf

Vout

Vout

RL

Vin

Vin

Rg

Rgen

Rg

gmvgs

gmvin

Vin

vgs

Rout

Vout

Vgen

vgs

RL

cd400716

VDD

1

14

P

P

2

13

3

12

4

11

P

N

5

10

6

N

9

8

7

N

VSS

CD4007

14

2

11

13

1

6

3

10

12

8

5

7

4

9

active loading
Active Loading

Vdd

Vdd

Q2

Q3

C2

Rf

Vout

C1

Q4

RL

Q1

Vin