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Ion Implantation - Overview. -Initially, doping was performed in a manner similar to thin film deposition via CVD,-This approach was soon found to lack the flexibility and control required by CMOS processing,Ion implantation quickly gained popularity for the introduction of dopant atoms.. -Modern ion implanters were originally developed from particle accelerator technology,-Their energy range spans 100eV to several MeV ( a few nm\'s to several microns in depth range),-The implantation is alwa14

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