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Integrated Circuit Devices

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  1. Integrated Circuit Devices Professor Ali Javey Summer 2009 Fabrication Technology

  2. Silicon Device Fabrication Technology Over 1015 transistors (or 100,000 for every person in the world) are manufactured every year. Variations of this versatile technology are used for flat-panel displays, micro-electro-mechanical systems (MEMS), and even DNA chips for DNA screening...

  3. Terminology SSI (Small Scale Integration) – few transistors MSI (Medium Scale Integration) – hundreds LSI (Large Scale Integration) - thousands VLSI (Very Large Scale Integration) - millions ULSI (Ultra Large Scale Integration)

  4. Foundry (Fab) • Foundry (also called a fab for fabrication plant) is used to refer to a factory where devices like integrated circuits are manufactured. The central part of a fab is a cleanroom. • Note the difference between a fab and a lab.

  5. Cleanroom Standards Federal Standard Class Limits Why do we need cleanrooms?

  6. Introduction to Device Fabrication Oxidation Lithography & Etching Ion Implantation Annealing & Diffusion Thin Film Deposition

  7. Oxidation of Silicon Thin oxide Si + O2 SiO2 Si +2H2O  SiO2 + 2H2 Dry Oxidation : Thick oxide Wet Oxidation :

  8. Oxidation of Silicon

  9. Oxidation of Silicon EXAMPLE : Sequential Oxidation (a) How long does it take to grow 0.1m of dry oxide at 1000 oC ? (b) After step (a), how long will it take to grow an additional 0.2m of oxide at 900 oC in a wet ambient ? Solution: (a) From the “1000oC dry” curve in Slide 3-3, it takes 2.5 hr to grow 0.1m of oxide. (b) Use the “900oC wet” curve only. It would have taken 0.7hr to grow the 0.1 m oxide and 2.4hr to grow 0.3 m oxide from bare silicon. The answer is 2.4hr–0.7hr = 1.7hr.

  10. Lithography Development Resist Coating Positive resist Negative resist Photoresist Oxide Si (a) Si Si Deep Ultraviolet Light (c) Optical Lens system Photomask with opaque and clear patterns Si Si (d) Exposure Etching and Resist Strip (b)

  11. Lithography • Photolithography Resolution Limit, R • R ³ kldue to optical diffraction • Wavelength lneeds to be minimized. (248 nm, 193 nm, 157 nm?) • k (~ 0.5) can be reduced by • Large aperture, high quality lens • Small field, step-and-repeat using stepper • Phase-shift mask • Optical proximity correction • Lithography is difficult and expensive. There are ~20 lithography steps in an IC process.

  12. Other Advanced Lithography Methods • EUV Photolithography • E-beam Lithography • Dip-pen lithography

  13. Dip-pen Lithography, Chad Mirkin, NWU

  14. Richard Feynman

  15. Pattern Transfer–Etching wet etch dry etch Isotropic etching Anisotropic etching

  16. Pattern Transfer–Etching • Dry Etching (also known as Plasma Etching, or • Reactive-Ion Etching) is anisotropic. • Silicon and its compounds can be etched by plasmas • containing F. • Aluminum can be etched by Cl. • Some concerns : - Selectivity and End-Point Detection - Plasma Process-Induced Damage or Wafer Charging Damage and Antenna Effect

  17. Scanning electron microscope view of a plasma-etched (dry-etched) 0.16 mm pattern in polycrystalline silicon film.

  18. Doping Ion Implantation • The dominant doping method • Excellent control of dose (cm-2) • Good control of implant depth with energy (KeV to MeV) • Repairing crystal damage and dopant activation requires annealing, which can cause dopant diffusion and loss of depth control.

  19. Ion implantation Phosphorous Density Profile after Implantation

  20. Doping Other Doping Methods • Gas-Phase Doping : Used to dope Si with P using • POCl3. • Solid-Source Doping : Dopant diffuses from a doped • solid film (SiGe or oxide) into Si. • In-Situ Doping : Used to dope deposited films during film deposition.

  21. Dopant Diffusion N : Nd or Na (cm-3) No : dopant atoms per cm2 t : diffusion time D : diffusivity, is the approximate distance of dopant diffusion

  22. Dopant Diffusion D increases with increasing temperature. Some applications need very deep junctions (high T, long t). Others need very shallow junctions (low T, short t).

  23. Dopant Diffusion Shallow Junction and Rapid Thermal Annealing • After ion implantation, thermal annealing is required. Furnace annealing causes too much diffusion of dopant for some applications. • In rapid thermal annealing (RTA), the wafer is heated to high temperature in seconds by a bank of heat lamps. • Also RTO (oxidation), RTCVD (chemical vapor deposition), RTP (processing).

  24. Thin-Film Deposition Three Kinds of Solid Crystalline Polycrystalline Amorphous Silicon wafer Thin film of Si or metal. Thin film of SiO2 or Si3N4.

  25. Thin-Film Deposition • Metal layers for device interconnect • Inter-metal dielectric • Poly-Si for transistor gate • Barrier against interdiffusion • Encapsulation

  26. Sputtering Schematic Illustration of Sputtering Process

  27. Chemical Vapor Deposition (CVD) Thin film is formed from gas phase components.

  28. Chemical Vapor Deposition (CVD) LPCVD Systems

  29. Interconnection–The Back-end Process

  30. Interconnection–The Back-end Process Multi-Level Metallization Sun Microsystems Ultra Sparc Microprocessor

  31. Interconnection–The Back-end Process Copper Interconnect • Al interconnect develops voids from electromigration. • Cu has excellent electromigration reliability • and 40% lower resistance than Al.

  32. Chapter Summary–A Device Fabrication Example Start Annealing & Diffusion Oxidation Al Sputtering Lithography Oxide Etching Lithography

  33. Chapter Summary–A Device Fabrication Example Metal etching Au deposition on the back side CVD nitride deposition Lithography and bonding window etching Back Side milling Dicing, wire bonding, and packaging