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ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING. Chemical Sensor Lab Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041

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ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

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  1. ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING • Chemical Sensor Lab • Dr. Lynn Fuller • Webpage: http://people.rit.edu/lffeee • Microelectronic Engineering • Rochester Institute of Technology • 82 Lomb Memorial Drive • Rochester, NY 14623-5604 • Tel (585) 475-2035 • Fax (585) 475-5041 • Email: Lynn.Fuller@rit.edu • Department webpage: http://www.microe.rit.edu 4-26-2010 chemical_sensor_lab.ppt

  2. OUTLINE Lab Proceedure Concentration Calculation ISFET

  3. LAB PROCEEDURE Measure Resistance of Chemical Sensor in air Measure Resistance of Chemical Sensor in 10,000 ppm Acetone Set up HP4145 to obtain resistance vs time Take data for 3 min on 3 min off at 1000ppm, 10,000ppm, 100,000ppm Measure ISFET Id vs Vgs in DI water Measure ISFET Id vs Vgs in different pH liquids

  4. GAS CONCENTRATION CALCULATOR

  5. CHEMICAL SENSOR MEASUREMENTS Computer controlled ohmmeter measures resistance every second for 15 min. Output is plotted versus time. Mix a polymer with Carbon Black and apply a thin coat over interdigitated gold fingers 30s off, 3 min on, 3 min off, 3 min on, 3 min off, etc.

  6. ICS R VS TIME SETUP Turn on HP4145 and PC Open ICS software on desktop Select NI 32 Thunk Select HP 4145 connect --> configure  poll Select Device Icon --> New: give name  Select symbol Assign Source Units: SMU1 and SMU2 Click on Time Stimulus: Voltage Measure: Voltage and Current Mode: Constant Value (depends on resistance) Time Measurement Bias: Time Bias OK

  7. ICS R VS TIME SETUP Set up equation for resistance Set up Plot Select Time Measure Then Single

  8. ION-SENSITIVE FETS ISFETS Reference Electrode 2010 Murat Baylav SiO2/Si3N4 Gate Insulator RIT’s First ISFETs Source Drain pH ~ 4 Silicon Ids (Amps) When immersed in a solution containing ions, the ions at the surface of the gate insulator control the drain current similar to a voltage on the gate of a FET. pH ~ 10 Vds pH Vref = -2 volts

  9. MEMS ISFET PH TESTING Ids (Amps) pH

  10. REFERENCES • “Recent Advances in the Gas-Phase MicroChem Lab”, Patrick R. Lewis, et.al., IEEE Sensors Journal, Vol 6 No. 3, June 2006 • “MEMS Chemical Gas Sensor”, Frank Zee and Jack Judy, UCLA, IEEE UGIM Conference • http://csrg.ch.pw.edu.pl/tutorials/electronicT_N/ Chemical Sensor Researd Group, Warsaw University of Technology, Warsaw, Poland, Professor Zbigniew Bruzozka

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