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An InGaP–GaAs HBT MMIC Smart Power Amplifier for W-CDMA Mobile Handsets

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 6, JUNE 2003. An InGaP–GaAs HBT MMIC Smart Power Amplifier for W-CDMA Mobile Handsets. Joon Hyung Kim, Ji Hoon Kim, Youn Sub Noh , Student Member, IEEE , and Chul Soon Park , Member, IEEE. 指導老師 : 林志明 學生 : 黃政德 系級 : 積體所研一. Introduction 1.

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An InGaP–GaAs HBT MMIC Smart Power Amplifier for W-CDMA Mobile Handsets

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  1. IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 6, JUNE 2003 An InGaP–GaAs HBT MMIC Smart Power Amplifierfor W-CDMA Mobile Handsets Joon Hyung Kim, Ji Hoon Kim, Youn Sub Noh, Student Member, IEEE, and Chul Soon Park, Member, IEEE 指導老師:林志明 學生:黃政德 系級:積體所研一

  2. Introduction 1 • A conventional PA achieves its peak efficiency at the maximum output power. • As the output power level is reduced, the efficiency drastically drops. • New design for increasing the efficiency.

  3. Introduction 2 • Bias current control • Bias voltage control • Dual-chain power amplifier: P1dB=16dBm , 28dBm

  4. Load line characteristics for the maximum output power

  5. Architecture of the dual-chain MMIC power amplifier

  6. Amplifier chain 1 is activated and chain 2 is disabled

  7. Proposed linearizer schematics using reverse diode capacitance

  8. Simulated gain compression and phase distortion of the power amplifier

  9. Schematic circuit of the dual-chain MMIC power amplifier

  10. Photograph of the dual-chain MMIC power amplifier

  11. Measured power gain and S11 of the dual-chain MMIC power amplifier

  12. Measured output power and dc average current

  13. Measured dc current and power added efficiency

  14. Measured gain and ACLR of the dual-chain MMIC power amplifier

  15. Conclusion Propose a new structure of dual-chain power amplifier. 21% PAE and -33dBc ACLR at 16dBm output power (low). 40% PAE and -30dBc ACLR at 28dBm out power (high).

  16. REFERENCES • [1] T. Fowler, K. Burger, N.-S. Cheng, A. Samelis, E. Enobakhare, and • S. Rohlfing, “Efficiency improvement techniques at low power levels • for linear CDMA and WCDMA power amplifies,” in Proc. IEEE RFIC • Symp., June 2002, pp. 41–44. • [2] J. H. Kim, J. H. Kim, Y. S. Noh, and C. S. Park, “A bias controlled HBT • MMIC power amplifier with improved PAE for PCS applications,” in • Proc. 3rd Int. Conf. Microwave and Millimeter Wave Technology, Aug. • 2002, pp. 725–728. • [3] P. Asbeck, G. Hanington, P. F. Chen, and L. Larson, “Efficiency and • linearity improvement in power amplifier for wireless communications,” • in IEEE GaAs IC Symp. Tech. Dig., 1998, pp. 15–18. • [4] G. Hanington, P. Chen, P. Asbeck, and L. Larson, “High-efficiency • power amplifier using dynamic power supply voltage for CDMA application,” • IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1471–1476, • Aug. 1999. • [5] Y. S. Noh, T. W. Lee, and C. S. Park, “Linearized high efficient HBT • power amplifier module for L-band application,” in IEEE GaAs IC • Symp. Tech. Dig., 2001, pp. 197–200.

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