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Electronic Properties of Ceramic Films. Tim Jurasevich Advisor: Dr. Kvam. Outline. Background Info Goals Procedure Results Conclusions. Perovskites. ABO 3 Middle atom can move Cubic above Curie temperature Structure changes below Curie temperature Permanent dipole.

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Electronic Properties of Ceramic Films


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electronic properties of ceramic films

Electronic Properties of Ceramic Films

Tim Jurasevich

Advisor: Dr. Kvam

outline
Outline
  • Background Info
  • Goals
  • Procedure
  • Results
  • Conclusions
perovskites
Perovskites
  • ABO3
  • Middle atom can move
  • Cubic above Curie temperature
  • Structure changes below Curie temperature
  • Permanent dipole
conductive metal oxides
Conductive Metal Oxides
  • Conductive
  • Middle atom won’t move
  • Not capacitive
  • Ferroelectric Fatigue
srruo 3
SrRuO3
  • Orthorhombic
    • a = 5.57 Å
    • b = 7.86 Å
    • c = 5.54 Å
  • Nearly Tetragonal
lanio 3
LaNiO3
  • Rhombohedral
    • a = 5.45 Å
    • Low degree of tilt
  • Nearly Cubic
research goals
Research Goals
  • Create Strontium Ruthenate (SrRuO3) and Lanthanum Nickelate (LaNiO3) thin films
  • Sol-gel process
  • Refine process
  • Investigate properties of the thin films
sol gel process
SrRuO3 sol-gel

RuCl3

Ethanol

Water

SrAc2

H2O2

Black

More black

LaNiO3 sol-gel

La(NO3)3

2-methoxyethanol

MEA

NiAc2

Dark Blue

Sol-gel process
sol gel process9
Sol-gel process
  • Spin coated
    • SrRuO3 on Silicon
    • LaNiO3 on Glass
  • Annealed
    • SrRuO3 @ 800°C
    • LaNiO3 @ 700°C
sputtering platinum
Sputtering Platinum
  • Platinum stripes sputtered along the edges and in the middle
  • Lots of platinum required for good electrode
resistivity
Resistivity
  • SrRuO3
    • ρ = 350 µΩ∙cm
    • Ideal: 300 µΩ∙cm
  • LaNiO3
    • ρ = 700 µΩ∙cm
    • Ideal: 600 µΩ∙cm
conclusions
Conclusions
  • SrRuO3 and LaNiO3 can be prepared by sol-gel methods
  • Both thin films exhibit fairly low resistivities
  • Process variations affect crystallographic texture
thank you
Thank You

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