EE4800 CMOS Digital IC Design & Analysis . Lecture 3 MOS Transistor Device Characteristics Zhuo Feng. Outline. Introduction MOS Capacitor NMOS I-V Characteristics PMOS I-V Characteristics Gate and Diffusion Capacitance Nonideal Transistor Behavior Process and Environmental Variations.
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MOS Transistor Device Characteristics
Cox = eox / tox
for contacted diff
go to 0 in cutoff
for nMOS and pMOS