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ELCT 762 Final Projects

ELCT 762 Final Projects. Structure Analysis by using HFSS. General Project Description. Given a reference restructure Task: Compare to s-parameters of reference structure to test structure with Ansoft HFSS. Before you start, determine a hypothesis. Annotate and discuss assumptions

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ELCT 762 Final Projects

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  1. ELCT 762 Final Projects Structure Analysis by using HFSS

  2. General Project Description • Given a reference restructure • Task: Compare to s-parameters of reference structure to test structure with Ansoft HFSS. • Before you start, determine a hypothesis. • Annotate and discuss assumptions • Identify and discuss issues relating to accuracy. • Summary: Judgment against hypothesis. • Full mark will be 20 points. Introduction

  3. Report Format is Power Point • Use outline as described on previous page • Size of document should be geared to 20 minutes if it were presented (20 pages). • The theme is technical communication • Audience is electrical engineers who may not experience with ANSOFT. • Grading will be how well you communicate to the instructor. • You need to choose a name for your project case • Extra Credit – determine the convergence of the S-parameters – relation to the edge of ports (max 2 points). • Extra Credit – Determine equivalent circuit in PSPICE. (Hint: lookup peeling and step response. Max: 4 pints ) Introduction

  4. Basic microstrip structure - Cross section 5 mils wide = W s for CU = 4.0e8 S/M 1 mil thick - T er=3.7 tan d= 0.017 Dielectric height = h1 = 4 mils Width=1 inch er=3.7 tan d= 0.017 Dielectric height = h1 = 50 mils er=3.7 tan d= 0.017 Dielectric height = h1 = 4 mils Bottom trace will not be used for some projects Frequency range is 100 MHz to 10GHz Introduction

  5. Your job to create Top view Start 1” square max for dielectric Need to adjust dielectric Dimensions to structure Introduction

  6. Terminology Terminal_1 Terminal_1 Terminal_2 Terminal_2 Port_1 Port_2 Introduction

  7. Project 1: Compare DS21 and DS11 between structures • Between lines, s (edge to edge) 25 mils • All lines 1”in length • 10 bends. 25 mils jog • Line length is defined as the center of the lines. s s Introduction

  8. Project 2: Compare DS21 and DS11 between structures • Between lines, s (edge to edge) 25 mils • All 1” length • 10 vias. 10 mils cylinder, 20 mil anti via. • Via spacing center to center is 50 mils Via cross section Introduction

  9. Project 3: Compare DS21 and DS11 between structures • Between lines, s (edge to edge) 25 mils • All 1” length ( include via length) • 10 vias. 10 mils cylinder, 20 mil anti via. • Via spacing center to center is 50 mils • Trace connect on other side of board Via cross section Introduction

  10. Project 4: Compare reference db s21 to 10 times db of s21 small section • Between lines, s (edge to edge) 25 mils • All 1” length • Test case is 100 mils long 100 mils wide Introduction

  11. Project 5: Compare DS21 and DS11 between structures • Between lines, s (edge to edge) 25 mils for reference • 5 mils space (edge to edge) for test case. • All 1” length • Trace connect on other side of board Introduction

  12. Stackup for last 1 mil thick - T er=3.7 tan d= 0.017 Total height = b = 57mils Dielectric height = h1 = 55mils Introduction

  13. Differential S Parameters Introduction

  14. Differential S Parameters (cont’d) Introduction

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