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Performance test of the SOI pixel detector

This presentation covers the radiation damage and performance test of the SOI pixel detector by Hideki MIYAKE from Osaka University for the SOIPIX group at the DPF-JPS joint meeting in Hawaii on Oct. 31, 2006. It includes strip and pixel performance tests, TCAD simulation studies, and related talks. Different chip resistivity evaluations, breakdown voltages, laser pulse scans, and beta source responses were analyzed. The presentation highlights the performance, characteristics, and potential applications of the SOI detector produced using a commercial 0.15µm SOI CMOS process.

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Performance test of the SOI pixel detector

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  1. Performance test of the SOI pixel detector Hideki MIYAKE (Osaka University) for SOIPIX group Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  2. Introduction Radiation damage test H.Ishino TCAD simulation study M.Hazumi Performance test This talk Related talks

  3. SOIPIX collaborators KEK Detector Technology Project : [SOIPIX Group] Y. Arai*, Y. Ikegami, H. Ushiroda,Y. Unno, O. Tajima, T. Tsuboyama,S. Terada, M. Hazumi, H. IkedaA,K. HaraB, H. IshinoC, T. KawasakiD, H. MiyakeE, G. VarnerF, E. MartinF, H. TajimaG, M. OhnoH, K. FukudaH, H. KomatsubaraH, J. IdaH, H. HayashiH KEK、JAXAA, U. TsukubaB, TITC,Niigata U.D, Osaka U.E, U. HawaiiF, SLACG, OKI Elec. Ind. Co.H (*)—contact person Financial Support by KEK Detector Technology Project

  4. List of 2005 TEG Our fully-Depleted CMOS SOI TEG is fabricated by OKI Electric Industry Co. Ltd. - commercial technology with 150nm rule

  5. Performance testOUTLINE • Strip TEG • I-V characteristics • Laser pulse scan • Pixel TEG • I-V characteristics • Laser image view • Beta source

  6. 2.5mm Short p+-strip (length:460um) Window for Light Illumination This one! Bonding Pad Strip TEG We fabricated two types of chips with a different resistivity. (standard and high resistive type) This time we evaluated the high resistive type. (N-type~700Ωcm ~6✕1012 cm-3)

  7. Substrate-strip I-V I(A) 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 w/FET electrodes I Type8 Type7 Breakdown Type4 Type3 Type2 I Type1 strip-strip I-V 0 10 203040 50 60 (V) ohmic Type5 Type6 w=10um w=30um FET 0 10 203040 50 60 (V) w=40um p-n junction exists Breakdown:50~60V Strip I-V characteristics • Different strip structures • Strip width • FET electrodes n w p-strip

  8. Laser Pulse Microscope Laser Amp SoI n-bias • We used two types laser: • Diode laser Hamamatsu PLP-01 (λ=859nm) • Diode laser PicoQuant PDL-800B (λ=980nm) Laser 270KΩ SoI chip p Amp (CS527) 50MΩ

  9. 859nm • Unfocused • Pulses are seen at all 3 channels Note:Most right strips are coupled 2 4 1 980nm • Focused (microscope) • Only one channel shows the pulse good channel separation! 2 4 4 2 1 Pulse Shape

  10. No saturation until breakdown Not yet fully depleted Hot Spot search is necessarylater Charge collection efficiency Focused Laser Pulse height depends on Vback 980nm

  11. Laser Scan SOI chip • Focused 980nm Laser is injected on movable stage. • Two windows for light injection • When laser light hits the readout metal traces, the observed charge reflect the light • Reasonable charge collection and separation between strips is confirmed. Laser 980nm

  12. Pixel TEG CMOS Active Pixel Sensor Type 20 mm x 20 mm 32 x 32 pixels Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  13. Pixel Layout Window for Light Illumination (5.4 x 5.4 um2) 20 mm(pixel) p+ junction 2.5 mm (chip) 2.5 mm (chip) Storage Capacitance (100 fF) 6" MPW wafer

  14. Weak Light • The ramp up speed differs depending on the light intensity. No Light No Light Strong Light Pixel first signal! • Vback=5V • Flashlight Reset-Integrate-Readout Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  15. Pixel I-V characteristic Breakdown:~100V Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  16. Hot Spot search Breakdown:~100V Hot Spot observed with infrared camera corner of the bias ring I = 40 A, T = 1 min  Smooth the corner and move the ring inward at next submission. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  17. Photo Image Plastic Mask (mm) 0.6 0.5 0.4 0.3 0.2 0.1 0 (mm) 0.6 0.5 0.4 0.3 0.2 0.1 0 Laser (670 nm) Vdet = 10 V 0 0.1 0.2 0.3 0.4 0.5 0.6 (mm) 0 0.1 0.2 0.3 0.4 0.5 0.6 (mm) Exposure Time = 7 ms • 32x32 image view with 670nm Laser and plastic mask Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  18. Response to beta source • Performance test as a particle detector Pixel sensor 90Sr source • Output of one channel is observed with oscilloscope. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  19. Response to beta source • Expected signal amplitude was observed for b-ray. • The voltage jump corresponds to particle hit. Vdet = 10 V Wdepletion ~ 44 m Q ~ 3500 e(0.6 fC) Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  20. Summary • We tested basic performance of SOI detector fabricated in a commercial 0.15 m SOI CMOS process. • Short strip sensor shows p-n junction and good channel separation with infrared laser light. • Pixel sensor shows good image ‘KEK06’ with red laser light. • Signal for-ray from 90Sr is observed. • Break down voltage of present pixel sensor is about 100V and hot spot is identified. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  21. Let’s enjoy Hawaii! Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  22. Let’s enjoy Hawaii! Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  23. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  24. 補足

  25. Hot Spot search for Strip TEG Hot spots are seen at edge of strips

  26. PD vs. FD IBM PowerPC, AMD Athlon,Sony Cell … OKI Radio Controlled Wrist Watch (CASIO)

  27. '05 10 Submission Layouts

  28. Previous Activity Processed in Lab. with ~3m technology. Ended at 2004?

  29. n+ contact Contact & Sheet Resistance Hi-R (> 1k Wcm) Std. wafer (p+, ~13 Wcm) p+ contact [Sheet R] n+ : 33 W/square p+ : 136 W/square [Contact](0.16x0.16um2) n+ : 87 W p+ : 218 W Hi-R (> 1k Wcm) Std. wafer(p+, ~13 Wcm)

  30. Pixel Leak current I ~ 150 fA/pixel

  31. Unfocused Laser V dependence of the pulse height No saturation until breakdown 859nm Note:Ch2Ch4 are swapped Focused Laser 980nm 980nm

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