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Objective of the proposed work Methodology to Achieve the Objective Filter Designing Fabrication of Filter. Low pass filter with DGS Operational Mechanism Simulation & Measured Results Conclusion References. Outlines. Objective of the proposed work.

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Outlines

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  1. Objective of the proposed work Methodology to Achieve the Objective Filter Designing Fabrication of Filter Low pass filter with DGS Operational Mechanism Simulation & Measured Results Conclusion References Outlines

  2. Objective of the proposed work To achieve 2.5GHz cut off frequency of microstrip low pass Chebyshev filter using DGS. Top View Bottom View

  3. Methodology To Achieve The Objective • Enhancement cut off frequency in the proposed filter is achieved by using defected ground structure. • DGS is using the structures etched in the microwave substrate ground plane. The DGS resonant characteristics are then used in filter design. • (a) Simulation cut off frequency 2.66 GHz (b) VNA tested cut off frequency 2.715 GHz.

  4. Filter Design 5th order Chebyshev Low pass filter using Insertion loss method

  5. Design Specification To design 5th order Chebyshev Low pass filter using Insertion loss method should be as follows N=5 Rs = RL = 50Ω. Cut-off frequency fc = 2.5GHz Substrate used: GML 1000 Permittivity of substrate Єr = 3.2 Height h = 0.762mm Ripple=0.01dB

  6. Design Specification Schematic of LPF filter Where: go = 1 g1 = 0.7563 g2 = 1.3049 g3 = 1.5773 g4 = 1.3049 g5 = 0.7563 g6 = 1 Step 1: – Prototype design:

  7. Design Specification Step 2: – Impedance and frequency scaling: For a new load impedance of Ro and cut-off frequency of ωo, the original resistance Rn ,inductance Ln and capacitance Cn are changed by the following formulae: R= RoRn L= (R0Ln)/ ωo C= Cn/(Roωo) 9 Using the transformation with Ro = 50Ω and ωo = 2π(2.5X10 ) the new values are: Rs = 50Ω C1 = 1.1041pf L2 = 4.7624nH C3 = 2.3026pf L4 = 4.7624nH C5 = 1.1041pf RL = 50Ω

  8. Design Specification Step 3: Converting into distributed elements: The relationship between inductance and capacitance to the transmission line length at the cutoff frequency ωc are where n=1,3,5. where n=2,4,6 • L1 = 3.9596mm,L2 = 9.3392mm,L3 = 8.2577mm,L4 = 9.3392mm • L5 = 3.9596mm w/d = 1.8322mm for z0 = 50Ω w/d = 6.3574mm for z0 = 20Ω w/d = .2940mm for z0 = 120Ω

  9. Fabrication of microstrip filter Photolithography steps The pattern on the mask is transferred on the substrate by means of photolithography Step1. Clean the substrate, dry thoroughly in front of heat blower. Step2. Coat the substrate with photo-resist material. Step3. Preheat the substrate in oven at 98oC -100oC for 10 minutes. Step4. Now aligned the mask on substrate Step5. Exposed the substrate now to Ultra Violet rays for 2 minutes.

  10. Fabrication of microstrip filtercont…. Step6. Keep the substrate in developer Step7. Now keep the substrate in acetone and then dry in front of heat blower Step8. Apply dye on the substrate and then now posts heat the substance for 10 minutes. Step9. Protect the ground of substrate with tape. Step10.Allow the substrate for Etching in the solution of FeCl3 and water, and get the desired pattern on the substrate

  11. Simulated geometry of microstrip filter Photograph of the fabricated filter

  12. Simulation Results Simulated result of the filter without DGS

  13. Simulation Results cont…. Simulated result of the filter with DGS

  14. VNA result of the fabricated filter With DGS

  15. Comparison Table of the simulated and tested result of defected ground structure

  16. Final Fabrication Specification: Size of substrate =50.8 X 50.8mm2 Thickness of Substrate =0.762 mm Dielectric constant of Substrate = 3.2 Width of the Microstrip patch (W) W1 = 1.8322mm for z0 = 50Ω W2 = .2940mm for z0 = 120Ω Length of the Microstrip patch (L) L1 = 3.9596mm,L2 = 9.3392mm, L3 = 8.2577mm,L4 = 9.3392mm L5 = 3.9596mm Dimensions of the DGS slot = 5 x5 mm2 Ground plane dimensions = 50.80 x 50.80 mm2 Cut-off frequency fc = 2.715GHz

  17. Conclusion • Design and fabrication of chebyshev low pass filetr is sucessfully done. • The method to calculate the cut off frequency of the LPF has been developed based on the modeled equivalent inductance and capacitance, which depends on the dimension of the DGS pattern. Due to presence of DGS in the implemented design, the cut off frequency is improved from 2.362GHz to 2.66GHz and finally 2.715GHz in the realized filter.

  18. Conclusion cont….. The fabricated filter show good agreement between the simulated and measured result. Compactness, easy fabrication and cost effective the proposed filter is useful for commercial wireless communication applications.

  19. References [1] Ahn, D.; Park, J.-S.; Kim, C.-S.; Kim, J.; Qian, Y.; Itoh, T., "A design of the lowpass filter using the novel microstrip defected ground structure," Microwave Theory and Techniques, IEEE Trans. Vol.49, no.1, pp.86-93, Jan 2001. [2] C. S. Kim, J. S. Park, D. Ahn, and J. B. Lim, “A novel 1-D periodic defected ground structure for planar circuits,” IEEE Microw. Wireless Compon. Lett., Vol. 10, no. 4, pp. 131–133, Apr. 2000 [3] Liu, H., Z. Li, and X. Sun, “Compact defected ground structure in microstrip technology,” Electron. Lett., Vol. 41, No. 3, pp. 132–134, 2005. [4] Mandal, M. K. and S. Sanyal, “A novel defected ground structure for planar circuits,” IEEE Microwave Compon. Lett., Vol. 16, No. 2, pp. 93–95, 2006. [5] J.-S. Lim, C.-S. Kim, Y.-T. Lee, D. Ahn, and S. Nam, “Design of lowpass filters using defected ground structures and compensated microstrip line”, Electron Lett, Vol.38, pp. 1357–1358, 2002. [6] Karmakar, N.C.; Roy, S.M.; Balbin, I., "Quasi-static modeling of defected ground structure," Microwave Theory and Techniques, IEEE Transactions on , Vol.54, no.5, pp.2160-2168, May 2006. [7] Easter, B., "The Equivalent Circuit of Some Microstrip Discontinuities," Microwave Theory and Techniques, IEEE Transactions on , Vol.23, no.8, pp. 655-660, Aug 1975.

  20. References [08] J.-S. Lim, C.-S. Kim, J.-S. Park, D. Ahn, and S. Nam, "Design of 10dB 90 branch line coupler using microstrip line with defected ground structure," IEEE Electronics Letters, vol. 36, no. 21, pp. 1784 1785, Oct. 2000.  [09] J. S. Lim, J. S. Park, Y. T. Lee, D. Ahn, and S. Nam, “ Application of defected ground structure in reducing the size of amplifiers,” IEEE Microwave Wireless Compon. Lett., Vol. 12, pp. 261– 263, July 2002.  [10] Lim J-S, Jeong Y-C, Ahn D, Lee Y-T, Cho H and Nam S, “Size-reduction and harmonic-rejection of microwave amplifier using spiral-defected ground structure,” European Microwave Conf., Vol 3, pp. 1421–4, 2003.  [11] J. S. Lim, H. S. Kim, J. S. Park, D. Ahn, and S. Nam, “A power amplifier with efficiency improved using defected ground structure,” IEEE Microwave Wireless Compon. Lett., Vol. 11, pp. 170–172, Apr. 2001.  [12] Ortega, A, de Menezes, Soares, L.R.A.X. and Abdalla,H., "Design of low-pass microstrip filters based on defected ground structure,”IEEEMicrowave & Optoelectronics Conference,pp.69,Oct.2011. [13]Pirani, Saeid, Nourinia, Javad, Ghobadi and Changiz, “Design of small modified microstriplowpass filter with folded U-shaped defected ground structure”, ICEE, pp.108-111, 2010  [14]Kumar,A,Choudhari,N.P. and Verma,A.K., “Contest-k and m-derived composite lowpass filter using defected ground structure”, IEEE Advanced Computing & Communication Technologies, pp.454-456, 2012.

  21. Thanks

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