Advanced Characterization of InAs/GaSb Nanowire Arrays: Lateral Composition Modulation

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This study presents a detailed analysis of the lateral composition modulation in InAs/GaSb superlattices, focusing on nanometer-sized quantum wires. Fig. 1 showcases a reconstructed 3D structure of the nanowire array, revealing critical structural details. Fig. 2 illustrates X-ray reciprocal space mapping around specific reciprocal lattice points, detailing scans at various Qx and Qz values, with experimental data aligned against simulations. Insights from this research contribute to the advancement of infrared spectroscopy techniques, crucial for further exploration in semiconductor physics.

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Dec 27, 2025

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Advanced Characterization of InAs/GaSb Nanowire Arrays: Lateral Composition Modulation

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University of Houston Fig. 1. A reconstructed 3D structure of the InAs/GaSb nanowire array. Lateral Composition Modulation in InAs/GaSb Superlattices: Nanometer Sized Quantum WiresDonna W. StokesDMR 0237811 Fig. 2. (a) X-ray reciprocal space map around the (24) reciprocal lattice points of the nanowire sample. (b) Qx scan at Qz = 3.9887. (c) Qz scan at Qx=2.00. The inset in (c) is a (004) Qz scan at Qx=0. Dots – experimental data; lines – simulation.
University of Houston Lateral Composition Modulation in InAs/GaSb Superlattices: Nanometer Sized Quantum WiresDonna W. StokesDMR 0237811 Ms. Cushenberry assiststhe PIwith alignment of a sample for infrared spectroscopy. The PI poses in front of a second grader’s science project entitled “What is Static Electricity?” at Peterson Elementary’s Science Fair.