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December 11th. 2011 U-In Chung, Samsung

ITRS ERD/ERM in Seoul. December 11th. 2011 U-In Chung, Samsung. ERD/ERM Organization & Member(2009). KSIA. IRC : Joo-Tae Moon (samsung) Jae-Sung Roh (Hynix) Yoon-Jong Lee (Dongbu). Korea TWGs. ERD(ERM) WG. ERD/ERM Organization & Member(2012~). KSIA. IRC : Si Young Choi ( samsung )

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December 11th. 2011 U-In Chung, Samsung

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  1. ITRS ERD/ERM in Seoul December 11th. 2011 U-In Chung, Samsung

  2. ERD/ERM Organization & Member(2009) KSIA IRC : Joo-Tae Moon (samsung) Jae-Sung Roh (Hynix) Yoon-Jong Lee (Dongbu) Korea TWGs ERD(ERM) WG

  3. ERD/ERM Organization & Member(2012~) KSIA IRC : Si Young Choi (samsung) Jae-Sung Roh (Hynix) Yoon-Jong Lee (Dongbu) Korea TWGs ERD(ERM) WG

  4. ERD/ERM ITWG Working Group Regional Interests (2009) Regional interest ; a. Narrowing ~15nm Emerging Research memory candidates  Done b. Emerging Research Device : - Hetero integration of III-V on Si in ERD  Done - Focus on Energy effective devices (ex. BTB devices)  Done c. Emerging Research Architectures : - Focus on 3D Architectures : CMOL etc.  Not yet d. Emerging Research Materials : - Focus on Materials for memory  Done - Many forums on memory materials for MLC and 3 D Not yet

  5. Review 2009 ERD Chapter-Memory (I) Review 2009 ERD Chapter • Memory U-In Chung, Samsung • Need to create table of current source for memory • For example in the case of 1D1R, no description on how to make D) •  done • No description on electrical optical hybrid technology for MtM • (optical memory?) •  Not yet ( It will propose again in 2011 Songdo meeting ) • Need to define (or make a table) a role ( necessary condition) of memory element • as an interconnection.  Half Done ( It will propose again in 2011 Songdo meeting) • Examples ; • - For configurable logic using such as CMOL • - For Inference Architecture such as Bayesian inference network

  6. Review 2009 ERD Chapter-Memory (II) Review 2009 ERD Chapter • Memory U-In Chung, Samsung IV. Storage Class memory such as Magnetic Packet Memory ( Racetrack )  Storage class memory was defined (Done) -High scalability : Domain wall size in perpendicular magnetization material (<10nm and 2F2)) -High speed: Domain wall velocity > 100m/s, operational speed below a few ns -High operational current: in-plane permalloy > 108 A/cm2, out-of plane multilayer > 107 A/cm2 reduced to level of 106 A/cm2 by Rashiba or asymmetric structure.

  7. ERD/ERM ITWG Working Group Regional Interests (2009) 2011 New Regional interest ; a. Emerging Research Device : - Focus on Neuromorphic computing (Ex. Workshop) b. More than Moore : - Exploreoptical interconnection - Explore NEMS d. Emerging Research Materials : - Many forums on memory materials for MLC and 3 D

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