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ACTFEL Device Modeling via SPICE. J. P. Bender and J. F. Wager Department of Electrical and Computer Engineering Center for Advanced Materials Research Oregon State University Corvallis, Oregon 97731-3211 http://www.ece.orst.edu/~jfw. Organization:. Fowler-Nordheim Diode Model

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actfel device modeling via spice
ACTFEL Device Modeling via SPICE
  • J. P. Bender and J. F. Wager
  • Department of Electrical and Computer Engineering
  • Center for Advanced Materials Research
  • Oregon State University
  • Corvallis, Oregon 97731-3211
  • http://www.ece.orst.edu/~jfw
organization
Organization:
  • Fowler-Nordheim Diode Model
  • Double-sheet Charge Model
fowler nordheim model transferred charge curve
Fowler-Nordheim model: Transferred Charge Curve

Fowler-Nordheim Model

Experimental Data

two sheet charge model
Two-sheet Charge Model
  • 1. Emission Mechanisms
    • Field emission (pure tunneling)
    • Thermal emission
    • Trap-to-band impact ionization
  • 2. Charge Capture
  • The probability that an electron crossing a sheet of charge is captured depends on:
    • Electric field at the sheet
    • Occupancy of the sheet
two sheet charge model1
Two-sheet Charge Model

Space Charge Creation via Field Emission

two sheet charge model2
Two-sheet Charge Model

Space Charge Creation via Trap-band Impact Ionization

two sheet charge model static space charge
Two-sheet Charge Model: Static Space Charge
  • Ionized traps are not allowed to refill
  • FB= 1.5 V (experimental value)
  • Bulk trap depth = 1.38 V
slide17
Transferred Charge Capacitance Overshoot (Two-sheet charge model)

Experimental Data

Fowler-Nordheim Diode model

conclusions
Conclusions
  • Fowler-Norheim Diode
  • Simple yet accurate SPICE model for devices without space charge
  • Two-sheet Charge Model
  • Demonstrates mapping of device physics to SPICE
  • Large amounts of C-V overshoot in SPICE
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