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meeting report

meeting report. 943336 陳建忠 11/9. outlne. photolithography recent work MgB 2 future work. photolithography. 1. 烘烤基版 使基版上水分去除 90 度 90 秒 2. 光組塗佈 10 秒 1000rpm 20 秒 5000rpm HMDS 光阻液 3. 軟烤 以去除光阻內大部分溶劑改善附著性，提升晶圓上光阻均勻性且在蝕刻中有較佳的線寬。 90 度 90 秒 4. 曝光 5. 硬烤

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meeting report

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  1. meeting report 943336 陳建忠 11/9

  2. outlne • photolithography • recent work • MgB2 • future work

  3. photolithography • 1. 烘烤基版 使基版上水分去除 90度 90秒 • 2. 光組塗佈 10秒1000rpm 20秒5000rpm HMDS 光阻液 • 3. 軟烤 以去除光阻內大部分溶劑改善附著性，提升晶圓上光阻均勻性且在蝕刻中有較佳的線寬。 90度 90秒 • 4. 曝光 • 5. 硬烤 蒸發掉任何殘留的溶劑及硬化光阻 • 6. 顯影 顯影液下 浸泡 沖洗 20秒

  4. recent work 50um 曝光顯影後 50um NiFe線 10um 曝光顯影後 10um NiFe線

  5. recent work 50um NiFe線 厚度 136nm 10um NiFe線 厚度 210nm

  6. MgB2 • Mg 鎂 沸點為1107°C 粉末狀的鎂易自然 • B 硼 沸點2550℃，硬度僅次於金剛石﹐較脆 蒸鍍結果，在電流170A時，鎂金屬全部蒸鍍完畢，而再把電流加到230A硼也未能蒸鍍。(0.18g>>0.178g)

  7. future work 1. 用一整塊wafer去曝光顯影，再把wafer拿去切割，製作NiFe線，再作電極。 2.把硼作成粉抹，在和鎂一起蒸鍍。

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