Carbon nanotube based nonvolatile random access memory for molecular computing
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Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing. Thomas Rueckes, et al. Science 289 , 94 (2000). Overview. Non-volatile memory can retain the stored information even when not powered.

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Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

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Carbon nanotube based nonvolatile random access memory for molecular computing

Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

Thomas Rueckes, et al.

Science 289, 94 (2000)


Overview

Overview

  • Non-volatile memory can retain the stored information even when not powered.

  • Different types of memory: MROM, EPROM, EEPROM, OTP, NAND/NOR Flash, Phase-change, MRAM, etc

  • NAND Flash is by far the largest percent of all NVM in the market today (Toshiba/SanDisk, Samsung, Hynix)


Structure and principle of operation

Single-Walled Nanotube (SWNT) crossbar array

Bi-stable electromechanical switch

OFF and ON states corresponding to elastic energy at finite separation and van der Waal energy minima

Switching between the states is accomplished by transiently charging SWNT to produce attractive and repulsive forces

Structure and Principle of Operation

“Organic or Inorganic

support structure”

Metal contact

(Paladium?)

SiO2

Si substrate

van der Waal contact


I v characteristics

I-V Characteristics

Lower 1,2

Upper 3,4

OFF

RON/ROFF ~ 10

ON

RON/ROFF ~ 105


Program erase read

ON/OFF state can be detected by measuring the resistance of the junction

+V

V2

-V

+V

V1

+V

Program/Erase/Read

Read

Program V=4.5V

Erase V=20V


Issues according to the authors

Random distribution of metallic and semiconducting SWNT

Crosspoint structure has multiple pathways and would need directional element like diode

Growth

Issues (according to the authors)


Key challenges to practical applications

Key Challenges to Practical Applications

  • Retention—ability to retain stored states for long periods under adverse conditions

  • Endurance—ability to switch multiple times without degrading performance

  • Scalability—program/erase voltages

  • Array Efficiency—user-bits vs. support circuitry


Questions

Questions?

Thank You!


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