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ZnO

Cu 2 O. C. ZnO. Antibonding orbital. Atomic orbitals. B onding orbital. Antibonding energy level. . B onding energy level. kristall bindning. N st Si atoms. Filled; 2N Unfilled; 4N. Filled; 2N. Filled; 2N + 6N. Filled; 2N electons. N st Si atoms. Filled; 2N Unfilled; 4N.

uriah-wright
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ZnO

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  1. Cu2O C ZnO

  2. Antibonding orbital Atomic orbitals Bonding orbital Antibondingenergylevel  Bondingenergylevel kristall bindning

  3. N st Si atoms Filled; 2N Unfilled; 4N Filled; 2N Filled; 2N + 6N Filled; 2N electons

  4. N st Si atoms Filled; 2N Unfilled; 4N Filled; 2N Filled; 2N + 6N Filled; 2N electons

  5. Eks: GaAs Eks: Si (a) Direct (b) Indirect

  6. Intrinsisk Si Par av e- og hull (h+) (EHP) !

  7. Ekstrinsisk Si EC EC Ed Ed N-type (a) EV EV T = 0 K T = 50 K EC EC P-type (b) Ea Ea Ea EV EV T = 0 K T = 50 K (c)

  8. Kvantbrunn (nanostruktur)

  9. Fermifordelning i intrinsisk, n-type og p-type material n p n = p n >p (a) Intrinsic (b) n-type n <p (c) p-type

  10. Schematic band diagram Density of states Fermi-Dirac distribution Carrier concentration EF (a) Intrinsic EF (b) n-type EF (c) p-type

  11. RT

  12. Variation in carrier mobility (cm2/Vs) as a function of total doping concentration, Na+ Nd(cm-3), for Si, Ge and GaAs at 300 K (a) Figure 3.23 (b) (c)

  13. To materialer i likevekt

  14. Hall effekt

  15. N st Si atoms Filled; 2N Unfilled; 4N Filled; 2N Filled; 2N + 6N Filled; 2N electons

  16. N st Si atoms Filled; 2N Unfilled; 4N Filled; 2N Filled; 2N + 6N Filled; 2N electons

  17. Eks: GaAs Eks: Si (a) Direct (b) Indirect

  18. Intrinsisk Si Par av e- og hull (h+) (EHP) !

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