1 / 23

A High Density Small Size RF Test Module for High Throughput Multiple Resource Testing

A High Density Small Size RF Test Module for High Throughput Multiple Resource Testing. Masayuki Kimishima ADVANTEST Corporation. Purpose. Trend of RF Test Increasing Test Ports of Devices Requirement for Low Test Cost . Requirements for RF ATE A Number of Simultaneous Measurement

tegan
Download Presentation

A High Density Small Size RF Test Module for High Throughput Multiple Resource Testing

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. A High Density Small Size RF Test Module for High ThroughputMultiple Resource Testing Masayuki Kimishima ADVANTEST Corporation

  2. Purpose • Trend of RF Test • Increasing Test Ports of Devices • Requirement for Low Test Cost • Requirements for RF ATE • A Number of Simultaneous Measurement • Higher Throughput of RF Function Test • -Our Target of RF Module for ATE- • Full 4-cHResources Integration with Compact Size • High Throughput of RF Function Test

  3. Outline • Comparison of New and Conventional RF Module • RF-SiP and RF board Construction • Core Technologies of RF-SiP - VNA Front-End SiP - High Speed SW Technology - RF Synthesizer SiP • Performance of New RF Module • Conclusion

  4. Conventional RF Module ConstructionBased on “RF-HBIC and Coaxial Cable” • Circuit Construction • RF-HBIC • RF Interconnection • Coaxial Cable • Frequency Synthesizer • YIG-Tuned Oscillator • Signal SW and Attenuator Circuits • PIN Diode, or Conventional HEMT • Facing Difficulties in realization of • Multiple Resource Integration • Higher Throughput

  5. New RF Module ConstructionBased on “RF-SiP and RF board” • Circuit Construction • RF-SiP • RF Interconnection • BGA & RF board • Frequency Synthesizer • SiP Integration by PLL-LSI • Signal SW and Attenuator Circuits • High Speed SW and ATT MMICs • Achievement of Compact RF Module with • Full 4-cH Multiple Resources • Higher Throughput per cH

  6. Structure of New RF Module Each Boards for 4-cH Volume Corresponds to“ 1/15 ” with Conventional Structure

  7. Can Operate Each of 4-cH Individually Resource Construction of RF Module New RF Module Conventional RF Module

  8. Outline • Comparison of New and Conventional RF Module • RF-SiP and RF board Construction • Core Technologies of RF-SiP - VNA Front-End SiP - High Speed SW Technology - RF Synthesizer SiP • Performance of New RF Module • Conclusion

  9. Structure of RF-SiP ALL SiPs are the same size of 20mm sq.

  10. RF Front-End Diagram for One Channel RF Front-End Board RF Synthesizer Board

  11. Outline • Comparison of New and Conventional RF Module • RF-SiP and RF board Construction • Core Technologies of RF-SiP - VNA Front-End SiP - High Speed SW Technology - RF Synthesizer SiP • Performance of New RF Module • Conclusion

  12. Block Diagram of VNA-FE SiP

  13. Measured Data of VNA-FE SiP Accuracy Conversion Gain and Noise Figure Dynamic range@1MHz BW, Freq-input : 2GHz = Pin_max - (Floor Noise + NF + Gain) - BW = + 10 - (-174 + 38 - 10) - 60 = 96 dB

  14. Outline • Comparison of New and Conventional RF Module • RF-SiP and RF board Construction • Core Technologies of RF-SiP - VNA Front-End SiP - High Speed SW Technology - RF Synthesizer SiP • Performance of New RF Module • Conclusion

  15. Settling Time of HEMT Device Definition of Settling Time Our Definition is 0 to 99.9% (0.01dB) Comparison of Settling Time for HEMTs

  16. This Work Conventional HEMT Measurement Great Improvement on Settling Time Simulation Measured Data of SP4T Switch MMIC Frequency Characteristics Settling Time

  17. Outline • Comparison of New and Conventional RF Module • RF-SiP and RF board Construction • Core Technologies of RF-SiP - VNA Front-End SiP - High Speed SW Technology - RF Synthesizer SiP • Performance of New RF Module • Conclusion

  18. Block Diagram of RF Synthesizer SiP(Fractional-N Frequency Synthesizer) 13 VCOs PLL-LSI

  19. Measured Data of Multi-Band VCOs(Frequency Response & Phase Noise) @ 1MHz off carrier

  20. Fraction Integer 48-bit, 4th-Order MASH Architecture - Step Size < 100 uHz - Quantization Noise Shaping Around 400kHz Loop BW Integer Fraction Block Diagram of Fractional-N Frequency Divider

  21. Outline • Comparison of New and Conventional RF Module • RF-SiP and RF board Construction • Core Technologies of RF-SiP - VNA Front-End SiP - High Speed SW Technology - RF Synthesizer SiP • Performance of New RF Module • Conclusion

  22. Performance of New RF Module Dynamic Range of VSG Frequency Settling Time of VSG < 150 usec Conventional : 800 usec

  23. Conclusion Compact Size RF Test Module with • Full 4-cH Resource Integration • Using RF-SiP and RF board Instead of Hybrid-IC and Coaxial Cable • Elimination of YIG Oscillator and PIN-Diode Switch • High Throughput of RF Function Test • High Speed Switch/Attenuator MMIC • VCO Base RF Synthesizer

More Related