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2004/12/06

進 度 報 告. 宋育泰. 2004/12/06. NPGS. 銅網鍍金後 300x SEM 照片. Result ( 劑量 130). Result ( 劑量 140). Practice for Hall Bar. 製 程. Wafer: 3*3 mm C015A. 1.Clean TCE ACEMethylDI-Water ……repeat 2.Coating AZ6112 Step1: 8000 (r.p.m.) 2 (sec) Step2: 6500 (r.p.m.) 15 (sec)

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2004/12/06

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  1. 進 度 報 告 宋育泰 2004/12/06

  2. NPGS

  3. 銅網鍍金後 300x SEM 照片

  4. Result (劑量130)

  5. Result (劑量140)

  6. Practice for Hall Bar

  7. 製 程 Wafer: 3*3 mm C015A 1.Clean TCEACEMethylDI-Water ……repeat 2.Coating AZ6112 Step1: 8000 (r.p.m.) 2 (sec) Step2: 6500 (r.p.m.) 15 (sec) 3.Baking 80 (℃) 80 (sec) 4.曝光 80 (sec) MASK: Omhic contact 5.顯影 Developer:AZ300 6.蒸鍍 1.Au--10(nm)--2.0~4.0(A/sec) 2.AuGe--20(nm)—2.0~4.0(A/sec) 3.Au--20(nm)--3.0~4.0(A/sec) 4.AuGe--20(nm)--2.0~4.0(A/sec) 5.Au--80(nm)--3.0~4.0(A/sec) 7.Left-off 8.燒結 420 (℃) 15(min) 通 H2:N2=3:7 9.Repeat (2.) and (3.) 10.曝光 80(sec) MASK:MESA 11.Repeat (5.) 12.蝕刻 8(sec) around 0.8(nm) H2SO4:H2O2:H2O=1:8:80

  8. Result

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