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Development of High V oltage 4H-Silicon Carbide Power Devices

Development of High V oltage 4H-Silicon Carbide Power Devices. Dr. Craig A. Fisher Affl .: School of Engineering, University of Warwick Research Fellow on the UPE Project (Devices theme). Project Plans & Objectives. Development of edge termination structures for 10 kV 4H-SiC power devices.

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Development of High V oltage 4H-Silicon Carbide Power Devices

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  1. Development of High Voltage 4H-Silicon Carbide Power Devices Dr. Craig A. Fisher Affl.: School of Engineering, University of Warwick Research Fellow on the UPE Project (Devices theme).

  2. Project Plans & Objectives Development of edge termination structures for 10 kV 4H-SiC power devices. Development of reliable ohmic contact solutions for high power density / high temperature applications. Development of 10 kV 4H-SiC MOSFET device.

  3. Potential Outcomes & Exploitation Plans The 10 kV 4H-SiC MOSFET can potentially transform a range of power electronics applications. Opportunity to generate IP using unique processing capability at Warwick.

  4. Input from the PE Community Input from other researchers in the semiconductor field would be useful Have a particular interest in high-k dielectrics for MOS gates and surface passivation.

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