PRODUCTION OF SILICON CARBIDE NANOWIRES BY INDUCTION HEATING. Kendra L. Wallis June 2006. Overview. Introduction SiC and Chemical Kinetics Induction Heating Testing and Use of Equipment Reaction Kinetics of SiC Nanowires Elimination of Excess Reactants Conclusions. Introduction.
Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.
PRODUCTION OF SILICON CARBIDE NANOWIRES BY INDUCTION HEATING
Kendra L. Wallis
June 2006
Si
SiC
CNT
Si diffuses through SiC product barrier phase
= fractional remains of reactant; k = rate constant
Summary of ModelsExpected Values of n
Rate constant k at temperature T
R = universal gas constant
E = activation energy
A = constant
Various molar ratios
C MWNT (95%) OD 60-100 nm, L 5-15 m
Consider other methods
Look for formation of anything else
Faraday’s law
Joule’s law
= 30 kHz max
Faraday’s law
Current flowing in a conductor flows only near the surface
Ampere-Maxwell law
Electromagnetic wave equation for E-field
Substitute solution into wave equation
Plane wave includes periodicity in time and space plus damping term in space
attenuation factor
For a wave traveling in the z-direction:
e-folding distance
skin depth
1Fahy S., Kittel, C., Louie, S., Am. J. Phys. 56 (11) 1998 989
d = d0 Bin = 0.7 Bout
d =2 d0 Bin < ½ Bout
Joule’s law
Current density
Current flows around shell, area element dr dz
Total current
STn – small radius, thin wall
LTk – large radius, thick wall
STk – small radius, thick wall
Q = R2dQ0
uncertainty (20s)
uncertainty (10s)
Reaction time
Identity 2