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Conclusion

Conclusion. We demonstrated the optoelectrical characteristics of short- period MQWs LEDs with thickness-fluctuated InGaN well . Well thickness variation randomly distributed in the InGaN well could be created by introducing ramped H2 in the GaN barrier spacer layer .

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Conclusion

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  1. Conclusion • We demonstrated the optoelectrical characteristics of short- period MQWs LEDs with thickness-fluctuated InGaN well. • Well thickness variation randomly distributed in the InGaNwell could be created by introducing ramped H2 in the GaN barrier spacer layer. • Well short-period MQWs LEDs with thickness-fluctuated InGaN well improved output power and decreased efficiency droop compared with traditional long-periodMQW LEDs.

  2. References • H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett., vol. 79, pp. 215–217, 2001. • N. Sharma, P. Thomas, D. Tricker, and C. Humphreys, “Chemical mapping and formation of V-defects in InGaN multiple quantum wells,” Appl. Phys. Lett., vol. 77, pp. 1274–1276, 2000. • 李宗憲, “有機金屬化學氣相沉積法成長氮化銦薄膜之特性研究,”July. 2006.

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