'Si 1' presentation slideshows

Introduction to SPIN

Introduction to SPIN. Radu Iosif (iosif@cis.ksu.edu). PROMELA (PROcess MEta LAnguage) is: a language to describe concurrent ( distributed ) systems: network protocols, telephone systems multi-threaded (-process) programs similar with some structured languages (e.g. C, Pascal)

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??????????????? Strain Effect on Crystalline and Nano-scale Silicon Solids

??????????????? Strain Effect on Crystalline and Nano-scale Silicon Solids. ???? : ??? ?? ?? : ??? ??????????????. Outline. Thesis organization Chapter 2 ? Strain-induced Raman Shift Chapter 3 ? Carrier Mobility in Orthorhombically Strained Silicon

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Ultrathin Gate Dielectrics on SiGe/SiGeC Heterolayers By Siddheswar Maikap

Ultrathin Gate Dielectrics on SiGe/SiGeC Heterolayers By Siddheswar Maikap Department of Physics Indian Institute of Technology (IIT), Kharagpur India. Who am I ?. IIT, Kharagpur, 1950 IIT, Kanpur, 1963 IIT, Bombay, 1958 IIT, Guwahati, 1994

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Forward Multiplicity Detector (status and progress)

Forward Multiplicity Detector (status and progress). Si-FMD (Forward Multiplicity Detector) Si-strip Ring counters (5) with 50.000 channels -5.1< ? < -1.7; 1.7< ? < 3.4 Off-line charged particle multiplicity for A+A, p+p Fluctuations event-by-event, flow analysis

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?????????. PART1 ?????????. ??? ???. ?????????. ??. ???? ?????? ???? ???? ???? ????. ????. ??????????? ?????????????. ??????. ?? 8086 ????????????? ?????????????????????. ????. ??????? ???? TD.EXE ??? DEBUG.EXE ?. TD ?????? 1 ?. ?? TurboDebugger ?? CPU ???????? :.

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Objectives

EXPERIMENTATION WITH BISMUTH SALTS SOLUTIONS AND NEW IDEAS FOR CMNS EXPLANATION D.S. Baranov, O.D. Baranova Protvino Moscow region, Russia baranovd@rambler.ru. Objectives.

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Feature-level Compensation & Control

F LCC. Feature-level Compensation & Control. Process Integration April 5, 2006. A UC Discovery Project. Year 2 Milestones. Si/Ge-on-insulator and Strained Si-on-insulator Substrate Engineering (M28 YII.13)

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Feature-level Compensation & Control

F LCC. Feature-level Compensation & Control. Process Integration April 5, 2006. A UC Discovery Project. Year 2 Milestones. Si/Ge-on-insulator and Strained Si-on-insulator Substrate Engineering (M28 YII.13)

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P. Ranade, H. Takeuchi, W.-H. Lee, V. Subramanian, and T.-J. King

Application of Silicon-Germanium in the Fabrication of Ultra-shallow Extension Junctions of Sub-100 nm PMOSFETs. P. Ranade, H. Takeuchi, W.-H. Lee, V. Subramanian, and T.-J. King IEEE Trans, Electron Devices, vol. 49, pp.1436-1443, Aug. 2002 C.-F. Huang ( ??? ) 05/26/2004. Outline.

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Synthesis of [2]- and [3]- ferrocenophanes containing trivalent phosphorus centers

Synthesis of [2]- and [3]- ferrocenophanes containing trivalent phosphorus centers. Denis Kargin Chemische Hybridmaterialien Prof. Dr. Rudolf Pietschnig. Ferrocenophanes. Rinehart Jr. et al . 1960. Osborne et al . 1975.

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Lecture 27

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Adviser : Dr. Hon-Kuan Reporter : Jheng-Jie Syu

NDL. STUT.

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High rate beam test of Gas Detectors

High rate beam test of Gas Detectors.

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Lecture #26

OUTLINE Modern BJT Structures Poly-Si emitter Heterojunction bipolar transistor (HBT) Charge control model Base transit time Reading: Finish Chapter 11, 12.2. Lecture #26. Modern BJT Structure. Narrow base n+ poly-Si emitter Self-aligned p+ poly-Si base contacts

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Lecture #26

OUTLINE Modern BJT Structures Poly-Si emitter Heterojunction bipolar transistor (HBT) Charge control model Base transit time Reading: Finish Chapter 11, 12.2. Lecture #26. Modern BJT Structure. Narrow base n+ poly-Si emitter Self-aligned p+ poly-Si base contacts

250 views • 12 slides

Tin Based Absorbers for Infrared Detection, Part 2

Tin Based Absorbers for Infrared Detection, Part 2. Direct energy gap group IV semiconductor alloys and quantum dot arrays in Sn x Ge 1-x /Ge and Sn x Si 1-x /Si alloy systems Regina Ragan, Kyu S. Min, Harry A. Atwater

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vector

linearity. vector. RNAi. mismatch. 16-18-20 c. SERCA1b. 12-14-16 c. EGFP. +. **. vector. RNAi. mismatch. SI 1.

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? Abstract

2009 IEEE Magnetic Society Summer School. ? Result and discussion.

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