'Ohmic contact' presentation slideshows

??????? Semiconductor Materials and Device Characterization

??????? Semiconductor Materials and Device Characterization Topic 1: resistivity and Four point Probe Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Resistivity: Four point probe. Features: two probes: carry current

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Lecture 8

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Lecture 8

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Lecture #13

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BJT Processing

BJT Processing. 1. Implantation of the buried n + layer. 2. Growth of the epitaxial layer. 3. p + isolation diffusion. n + layer. p + layer. n + layer. 4. Base p-type diffusion. p-base layer. 5. Emitter n + diffusion. n + buried layer. 6. p + ohmic contact. p-substrate.

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Non-Alloyed Ohmic Contact in HEMTs

Non-Alloyed Ohmic Contact in HEMTs. Introduction Ohmic contacts for HEMTs Non-alloyed ohmic contact technology Summary. 2004. 6. 22. Microwave devices 2003-21577 ? ? ?. Introduction - ohmic contacts. To allow electrical current to flow into or out of the semiconductor

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ITO (80nm) orNi (5nm)/Au(10nm)

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The Sixth International Workshop on Junction Technology (IWJT), May 15-16, 2006, Shanghai, China.

????????. The Sixth International Workshop on Junction Technology (IWJT), May 15-16, 2006, Shanghai, China. Stack-layered metals AuSiNi ohmic contact to n-InP. Wen-Chang Huang, Chih-Chia Wang. Abstract.

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