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EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010

EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub. x.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 21 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 21 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Fully biased n-MOS capacitor. V G. Channel if V G > V T. V S. V D. E Ox,x > 0. e - e - e - e - e - e -. n+. n+. p-substrate.

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380 views • 27 slides

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Mos ohmic reg - PowerPoint PPT Presentation

EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010

Semiconductor Device Modeling and Characterization EE5342, Lecture 21 -Sp 2002