'Localized doping' presentation slideshows

First principles simulations of nanoelectronic devices

First principles simulations of nanoelectronic devices. Jesse Maassen (Supervisor : Prof. Hong Guo) Department of Physics, McGill University, Montreal, QC Canada. Year. Channel length. 2012. 22 nm. 2015. 16 nm. 2018. 11 nm ?. (Source: ITRS 2010). Line of ~ 50 atoms.

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