'Interstrip capacitance' presentation slideshows

Ranjeet Center for Detector & Related Software Technology (CDRST)

TCAD Simulation of Geometry Variation under HPK campaign. Ranjeet Center for Detector & Related Software Technology (CDRST) Department of Physics and Astrophysics, University of Delhi (DU), Delhi, INDIA On behalf of Si Sensor Simulation Group. Overview. MSSD

430 views • 33 slides

Surface Effects and Breakdown Voltage

Surface Effects and Breakdown Voltage. Gian-Franco Dalla Betta INFN and DISI - University of Trento Via Sommarive, 14 I-38123 Povo di Trento (TN), Italy dallabe@disi.unitn.it. Outline. Introduction Basic mechanisms Main parameters: how to measure them experimental results

511 views • 32 slides

Charge collection measurement on slim edge sensors with the ALiBaVa system

353 views • 25 slides

Punch through protection and p-stop ion concentration in HPK strip mini-sensors

Punch through protection and p-stop ion concentration in HPK strip mini-sensors. Jan Bohm , Institute of Physics ASCR, Prague Peter Kodys , Pavel Novotny, Tomas Jindra , Zdenek Dolezal , Jan Scheirich , Charles University in Prague

350 views • 22 slides

TCAD simulations of isolation structures for n + -on-p silicon microstrip detectors

TCAD simulations of isolation structures for n + -on-p silicon microstrip detectors Claudio Piemonte piemonte@itc.it. Outline. Why is this work needed? Device Simulations - p-spray - p-spray experience @ ITC-irst - p-stop - combined p-spray/p-stop Conclusion.

356 views • 20 slides

Run IIB Silicon workshop

Run IIB Silicon workshop. Purdue University Bortoletto Daniela, Bolla Gino, Canepa Anadi, Roy Amit Hamamatsu testing I-V characteristics up to 1000V Depletion Voltage Coupling Capacitance short at 100V Leaky strip Polysilicon Resistor Sensors received at Purdue: SWA 61457 60

247 views • 17 slides

Sensors for CDF RunIIb silicon upgrade

Motivations for a new Si detector The current silicon detector lifetime is limited by: Double sided silicon sensors Limited (<200 V) applicable Bias Voltage Cooling capabilities Sensor temperature > ~5 ? C FE Chip in Honeywell rad-hard 0.8 m m bulk CMOS

128 views • 1 slides