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Reliability Degradation Characteristics of Ultra-thin Gate Dielectrics for Nano-CMOS Application

Reliability Degradation Characteristics of Ultra-thin Gate Dielectrics for Nano-CMOS Application. J.F. Kang. Institute of Microelectronics Peking University Beijing 100871, China. Acknowledgment:. N. Sa, B.G. Yan, H. Yang, J.F. Yang , Z.L. Xia (IME, PKU)

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Hfo 2 gate stack - PowerPoint PPT Presentation

Reliability Degradation Characteristics of Ultra-thin Gate Dielectrics for Nano-CMOS Application