'Guard ring' presentation slideshows

Ge Semiconductor Devices for Cryogenic Power Electronics - IV

Ge Semiconductor Devices for Cryogenic Power Electronics - IV. Electrochemical Society Seventh International Symposium on Low Temperature Electronics. 14 October 2003, Orlando, Florida. R. R. Ward, W. J. Dawson, L. Zhu, R. K. Kirschman GPD Optoelectronics Corp., Salem, New Hampshire

620 views • 46 slides

Radiation Hard silicon sensors for the CBM experiment at FAIR

Radiation Hard silicon sensors for the CBM experiment at FAIR. Sudeep Chatterji CBM Group GSI Helmholtz Centre for Heavy Ion Research CBM Collaboration Meeting 9-13 th March, 2009. Outline. Need for Detector simulations Simulation packages being used Grid Optimization

505 views • 32 slides

2011.11.3

Hamamatsu silicon detectors for high energy physics experiments. Kazuhisa Yamamura* , Shintaro Kamada. 2011.11.3. Outline. Development and production history of Hamamatsu SSD ( Silicon Strip Detector ) Production flow of SSD Failure analysis

420 views • 25 slides

Planar Pixel Sensor Production at CiS

Planar Pixel Sensor Production at CiS. Anna Macchiolo - MPP Munich. Project aimed to explore the possible range of application in fluence (hence detector radii) for planar pixels sensors at SLHC. Wafer layouts for the n-in-n and n-in-p batches have been submitted to CiS

341 views • 23 slides

Developments on 3D detectors at FBK-irst

384 views • 22 slides

Pixel Sensors for ATLAS

334 views • 21 slides

ECT 459

ECT 459. Lecture 3 Sensor Transducers. Capacitive Sensors. Electric Field C = ? A d ? = permittivity of dielectric [Farad/meter] ? of vacuum= 8.85 x 10-12 F/m A=area [meter 2 ] d=separating distance [meter] Sensors: (Conducting Materials)

332 views • 20 slides

TCT measurements with irradiated strip detectors

407 views • 20 slides

SINTEF

Edge-On Sensor with Active Edge Fabricated by 3D-Technology T. E. Hansen 1) , N. Ahmed 1) , A. Ferber 2) 1) SINTEF MiNaLab 2) SINTEF Optical Measurement Systems. SINTEF.

413 views • 20 slides

Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Characterization of prototype BTeV silicon pixel sensors before and after irradiation. Maria Rita Coluccia Simon Kwan Fermi National Accelerator Laboratory 2001 IEEE Nuclear Science Symposium, San Diego 3-10 Nov Friday, Nov 8, 2001. Outline. BTeV SINTEF pixel sensor prototypes

316 views • 20 slides

Test of Pixel Sensors for the CMS experiment

Test of Pixel Sensors for the CMS experiment. Amitava Roy. Purdue University. Pixel Sensors. The CMS experiment at the LHC will have a silicon pixel detector as its innermost tracking device. 2 barrels, 17(27) Mpixels. 4 forward disks, 12 Mpixels.

300 views • 18 slides

Edgeless ATLAS pixel detectors - first results

Edgeless ATLAS pixel detectors - first results. 07/09/09. Run 4750 of ATLAS pixel detectors. N-in-P detectors fabricated in high resistivity FZ silicon. ATLAS pixel detectors compatible with the FI3 chip

290 views • 18 slides

Silicon pad detectors for LCCAL: characterisation and first results

263 views • 17 slides

TCAD Simulation for SOI Pixel Detector

TCAD Simulation for SOI Pixel Detector. October 31, 2007 IEEE-NSS, Honolulu, Hawaii, USA Hirokazu Hayashi, Hirotaka Komatsubara (Oki Elec. Ind. Co.), Yasuo Arai, Masashi Hazumi (KEK), Yuji Saegusa (TIT) for the SOIPIX group. SOIPIX collaborators.

124 views • 11 slides

TPAC1.1 progress

TPAC1.1 progress. Jamie C 25 th June 2008. Status. FDR changes Single variant ? implemented across all bulk pixels Pixel layout changes as recommended New resistor layout(s) New test pixels - as 3x3 blocks of old/new shaper design Larger bond pads

176 views • 10 slides

Pixel 2000 - notes

196 views • 9 slides

CALICE pixel Deep P-Well results

CALICE pixel Deep P-Well results. P-well contact ground. Nwell ? 900 ? m 2. P-well 1 ? m ring gap. Collecting diodes 3.6 x 3.6 ? m 2. Hit points. Bias: NWell 3.5V Diodes: 1.5V. 50 ? m x 50 ? m pixel size. CALICE pixel Deep P-Well results. P-well contact ground.

401 views • 7 slides

Preliminary simulation study of a Coincidence Avalanche Pixel Sensor

Preliminary simulation study of a Coincidence Avalanche Pixel Sensor. M. Vignetti a *, F. Calmon a , R. Cellier a , P. Pittet a , L. Quiquerez a , A. Savoy-Navarro b

146 views • 1 slides

Total dose effects on deep sub-micron SOI technology for Monolithic Pixel Sensor development

178 views • 1 slides

CMOS and Microfluidic Hybrid System on Chip for Molecule Detection

CMOS and Microfluidic Hybrid System on Chip for Molecule Detection Bowei Zhang, Qiuchen Yuan, Zhenyu Li, Mona E. Zaghloul , IEEE Fellow Dept. of Electrical & Computer Engineering, The George Washington University. SPAD Breakdown Simulation. Quenching Circuit for SPAD.

182 views • 1 slides