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Biased pn junction - PowerPoint PPT Presentation

Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois

Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois

ECE 342 Solid-State Devices & Circuits 5. PN Junctions and Diodes. Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu. Definitions. B : material dependent parameter = 5.4 ? 10 31 for Si E G : Bandgap energy = 1.12 eV

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621 views • 43 slides
MOS TRANSISTOR THEORY

MOS TRANSISTOR THEORY

UNIT -1 Chapter -2. MOS TRANSISTOR THEORY. ( Neil weste p:- 41- 91). Introduction. A MOS transistor is a majority-carrier device , in which the current in a conducting channel between the source and the drain is modulated by a voltage applied to the gate. NMOS (n-type MOS transistor)

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1.39k views • 34 slides
Kristin Ackerson, Virginia Tech EE Spring 2002

Kristin Ackerson, Virginia Tech EE Spring 2002

Analog Electronics Tutorial Series DIODES. Kristin Ackerson, Virginia Tech EE Spring 2002. Table of Contents. What are diodes made out of?____________________slide 3 N-type material_________________________________slide 4 P-type material_________________________________slide 5

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388 views • 27 slides
Physics of Bipolar Junction Transistor

Physics of Bipolar Junction Transistor

Physics of Bipolar Junction Transistor. Overview. Structure and Circuit Symbol. (collects charge carriers). (controls the carriers that make the journey from E to C). (emits charge carriers). Two PN junctions (BE and BC). C and E cannot be swapped.

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390 views • 23 slides

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