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High Performance Substitutional-Gate MOSFETs Using MBE Source-Drain Regrowth and Scaled Gate Oxides

High Performance Substitutional-Gate MOSFETs Using MBE Source-Drain Regrowth and Scaled Gate Oxides. Sanghoon Lee 1* , A. D. Carter 1 , J. J. M. Law 1 ,D. C. Elias 1 , V. Chobpattana 2 , Hong Lu 2 , B. J. Thibeault 1 , W. Mitchell 1 , S. Stemmer 2 , A. C. Gossard 2 , and M. J. W. Rodwell 1

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High Performance Substitutional-Gate MOSFETs Using MBE Source-Drain Regrowth and Scaled Gate Oxides