1 / 26

Semiconductor Device Modeling and Characterization EE5342, Lecture 23 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 23 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Discussion of IC-CAP Parameter Extraction Lang. Download and bring a copy of: http://www.uta.edu/ronc/neff.txt

ozzy
Download Presentation

Semiconductor Device Modeling and Characterization EE5342, Lecture 23 Spring 2003

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Semiconductor Device Modeling and CharacterizationEE5342, Lecture 23Spring 2003 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. Discussion of IC-CAP Parameter Extraction Lang. • Download and bring a copy of: • http://www.uta.edu/ronc/neff.txt • http://www.uta.edu/ronc/iseff.txt • copy as *.xfm to your gamma acct • import *.xfm to appropriate setup • A brief PEL overview in 4/8 lecture. • IC-CAP user guide at: http://eesof.tm.agilent.com/docs/iccap/ic_ug/icug_2001.pdf

  3. Importing an .xfm file into a DUT • open DUT • select Extract / Optimize • /File/Open - select .xfm - select "browse" to select neff.xfm • Be sure variables selected are in DUT • Can plot in DUT/Plots as neff, neff.m and neff.s • Likewise for iseff

  4. neff.xfm LINK XFORM ”neff" { data { HYPTABLE "Link Transform" { element "Function" "Program" } BLKEDIT "Program Body" { k = 1.38066e-23 q = 1.60218e-19 T = 273.16 + TNOM Vt = k*T//q

  5. neff.xfm (cont.) vbe = vb - ve ! neff = dv/d(ln(i))/(Vt) lnic = log(ic.b) y = derivative(lnic,vbe,1) !dy/dx = derivative(x,y,1) return y//Vt } dataset { datasize BOTH 51 1 1 . . . meas and simu data ... } } }

  6. iseff.xfm LINK XFORM "iseff" { data { HYPTABLE "Link Transform" { element "Function" "Program" } BLKEDIT "Program Body" { k = 1.38066e-23 q = 1.60218e-19 T = 273.16 + TNOM Vt = k*T//q

  7. iseff.xfm (cont.) vbe = vb - ve ! neff = dv/d(ln(i))/(Vt) lnic = log(ic.b) y = derivative(lnic,vbe,1) !dy/dx = derivative(x,y,1) ne = y//Vt return exp(log(ic)-vbe/(ne*Vt)) } dataset { datasize BOTH 51 1 1 . . . meas and simu data ... } } }

  8. Values for gate workfunction, fm

  9. Values for fmswith metal gate

  10. Values for fmswith silicon gate

  11. Experimental valuesfor fms Fig 10.15*

  12. Calculation of thethreshold cond, VT

  13. Equations forVT calculation

  14. Fully biased n-MOScapacitor VG Channel if VG > VT VS VD EOx,x> 0 e- e- e- e- e- e- n+ n+ p-substrate Vsub=VB Depl Reg Acceptors y 0 L

  15. Effect of contacts,VS and VD

  16. Computing theD.R. width at O.S.I. Ex Emax x

  17. Computing thethreshold voltage

  18. Fully biased MOScapacitor in inversion VG>VT Channel VS=VC VD=VC EOx,x> 0 e- e- e- e- e- e- n+ n+ p-substrate Vsub=VB Depl Reg Acceptors y 0 L

  19. Flat band with oxidecharge (approx. scale) Al SiO2 p-Si +<--Vox-->- q(Vox) Ec,Ox q(ffp-cox) Ex q(fm-cox) Eg,ox~8eV Ec EFm EFi EFp q(VFB) Ev VFB= VG-VB, when Si bands are flat Ev

  20. Flat-band parametersfor n-channel (p-subst)

  21. MOS energy bands atSi surface for n-channel Fig 8.10**

  22. Fully biased n-channel VT calc

  23. References * Semiconductor Physics & Devices, by Donald A. Neamen, Irwin, Chicago, 1997. **Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986

More Related