Semiconductor Device Modeling and Characterization – EE5342 Lecture 09– Spring 2011. Professor Ronald L. Carter [email protected] http://www.uta.edu/ronc/. First Assignment. email to [email protected] In the body of the message include subscribe EE5342
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Semiconductor Device Modeling and Characterization – EE5342 Lecture 09– Spring 2011
Professor Ronald L. Carter
http://www.uta.edu/ronc/
www.uta.edu/ee/COE%20Ethics%20Statement%20Fall%2007.pdf
ptype
Ec
Ec
Ev
EFn
qfn= kT ln(Nd/ni)
EFi
Ev
ntype
EFi
qfp= kT ln(ni/Na)
EFp
Eo
N.B.: qc = 4.05 eV (Si),
and qf = qc + Ec  EF
qc(electron affinity)
qf
(work function)
Ec
Ef
Efi
qfF
Ev
EfN
Ec
qVbi = q(fn fp)
qfp < 0
Ec
Efi
EfP
Ev
Efi
qfn > 0
*Na > Nd > fp> fn
Ev
ptype for x<0
ntype for x>0
x
xpc
xn
0
xp
xnc
xp < x < xn is the Depletion Region
QuasiFermiEnergy (cont.)
QuasiFermiEnergy (cont.)
h0
O
O
O
O
O
O
+
+
+



Ex
Ncontact
pcontact
ptype CNR
ntype chg neutral reg
Depletion region (DR)
Exposed Donor ions
Exposed Acceptor Ions
W
x
xpc
xp
xn
xnc
0
r
+Qn’=qNdxn
+qNd
[Coul/cm2]
xp
x
xpc
xn
xnc
Charge neutrality => Qp’ + Qn’ = 0, => Naxp = Ndxn
qNa
Qp’=qNaxp
[Coul/cm2]
Ex
xp
xn
xnc
xpc
x
Emax
JunctionC (cont.)
r
+Qn’=qNdxn
+qNd
dQn’=qNddxn
xp
x
xpc
xn
xnc
Charge neutrality => Qp’ + Qn’ = 0, => Naxp = Ndxn
qNa
dQp’=qNadxp
Qp’=qNaxp
C’j2
C’j02
Va
Vbi
n
Nd
0
xn
x
Vbi=0.816 V, Neff=9.9E15, W=0.33mm